A highly bendable, high mobility graphene field-effect transistor with embedded-gate structure is fabricated on commercial polyimide films. Multi-finger configuration consisting of 10 and 18 fingers is used to increase the current drivability. Bendability measurements for the device show that it is fully functional at the bending radius of down to 1.3mm. The shift in the dirac point is less than 0.6V, which is the result from the high uniformity of the grown graphene films and the simplified process minimizing the exposure of graphene to chemicals and the risk of chemical contamination. Plasma enhanced chemical vapor deposited silicon nitride is used as a capping layer to prevent contamination of the device from environments and provides robust protection over exposure to liquids.
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