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Measurement of thermal contact resistance between CVD-grown graphene and SiO2 by null point scanning thermal microscopy

机译：通过空点扫描热显微镜测量CVD生长的石墨烯和SiO2之间的热接触电阻

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For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO2 layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO2 layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO2 is obtained as 10 × 10−8 ∼ 45 × 10−8 m2K/W.
机译：对于基于石墨烯的电子器件，测量和分析石墨烯和绝缘层之间的热接触电阻至关重要。在此，我们使用空点扫描热显微镜（NP STHM）测量CVD-生长的石墨烯和SiO 2层之间的热接触电阻，其可以通过防止热通量的影响通过纳米级空间分辨率来定量地用纳米级空间分辨率来分析温度分布气隙和样品表面性质如亲水性的变化。通过比较电加热石墨烯和SiO2层的温度跳跃的温度曲线与具有有限元方法的无热接触电阻的温度曲线，获得石墨烯和SiO 2之间的热接触电阻为10×10 -8 〜45×10 -8 m 2 k / w。

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