首页> 外文会议>IEEE International Conference on Nanotechnology >Fabrication of Cu2ZnSnS4 thin film by sulfurization of stacked solution-based precursors with different copper sources
【24h】

Fabrication of Cu2ZnSnS4 thin film by sulfurization of stacked solution-based precursors with different copper sources

机译:用不同铜源的堆叠溶液基前体硫制备Cu2ZnSns4薄膜

获取原文

摘要

In this work, a novel process to fabricate copper zinc tin sulfide (Cu2ZnSnS4, CZTS) thin films under non-vacuum system was reported. CZTS thin film was prepared successfully by sulfurizing stacked CZT sol-gel layers and thioacetamide (C2H5NS, TAA) layers. The thin films presenting different characteristics due to different copper sources were observed. The X-ray diffraction (XRD) and Raman shift peaks showed that copper from copper (II) acetate (CuOAc) attributed to CZTS while copper from copper (II) chloride attributed to Cu2S. Field emission scanning electron microscopy also showed different morphologies.
机译:在这项工作中,报道了一种在非真空系统下制造铜锌硫化锌(Cu2ZnSN4,CZT)薄膜的新方法。通过硫化堆叠的CZT溶胶 - 凝胶层和硫代乙酰胺(C2H5NS,TAA)层成功制备CZTS薄膜。观察到由于不同的铜来源呈现不同特性的薄膜。 X射线衍射(XRD)和拉曼换档峰表明,来自铜(II)乙酸铜(CUOAc)的铜归因于CZTS,而来自铜(II)氯化物归因于CU2S的铜。场发射扫描电子显微镜也显示出不同的形态。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号