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首页> 外文会议>International Conference on Transparent Optical Networks >Terahertz Modulation by Schottky Junction in Metal-Semiconductor-Metal Microcavities
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Terahertz Modulation by Schottky Junction in Metal-Semiconductor-Metal Microcavities

机译：金属半导体 - 金属微腔中肖赫特的肖赫兹调制

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摘要

We discuss arrays of metal-semiconductor-metal cavities as electrically tunable terahertz metasurfaces. The operation of the considered device is based on reverse biasing the Schottky junction formed between top metal strips and the n-type semiconductor buried beneath. The effective Drude permittivity of the cavity array is tuned by changing the depletion layer thickness via a gate bias applied between the strips and a back metal reflector. Combining Maxwell equations for terahertz waves with a drift-diffusion model for the semiconductor carriers into a multiphysics framework, we show that the proposed modulation concept is promising for a large part of the terahertz spectrum.
机译：我们将金属半导体 - 金属腔阵列讨论为电动Terahertz Metasurfaces。所考虑的装置的操作基于在顶部金属条和掩埋下方的N型半导体之间形成的肖特基结的反向偏置。通过在条带和后金属反射器之间施加的栅极偏压改变耗尽层厚度来调谐腔阵列的有效介绍介电常数。将MaxWell方程与半导体载流子的漂移扩散模型相结合到多层框架中，我们表明所提出的调制概念对太赫兹光谱的很大一部分承诺。

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