5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

机译：5 MeV质子和15 MeV电子辐射对4H-SiC nMOSFET电学参数的影响

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The impact of proton and electron irradiation on the electrical parameters of 4H-SiC nMOSFETs has been investigated by using time bias stress instability method. This study has allowed observing the effect of holes trapped in the oxide together with the generated interface traps. Improvements of important electrical parameters, such as the threshold voltage, the effective mobility and the maximum drain current were observed. These improvements could be connected with the Nitrogen and residual Hydrogen atoms diffusion from the SiO/SiC interface toward the epilayer during irradiation. These atoms are likely to create other bonds by occupying the Silicon and Carbon's dangling bond vacancies. This way, the number of passivated Carbon atoms is increasing, hence improving the SiO/SiC interface quality.

机译：利用时间偏置应力不稳定性方法研究了质子和电子辐照对4H-SiC nMOSFETs电学参数的影响。这项研究已经可以观察到氧化物中捕获的空穴以及所产生的界面陷阱的影响。观察到重要电参数的改进，例如阈值电压，有效迁移率和最大漏极电流。这些改进可能与氮和残余氢原子在辐照过程中从SiO / SiC界面向外延层的扩散有关。这些原子有可能通过占据硅和碳的悬空键空位而产生其他键。这样，钝化碳原子的数量增加，从而提高了SiO / SiC界面质量。

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《European Conference on Radiation and Its Effects on Components and Systems》|2013年|1-6|共6页
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Alexandru M.; Florentin M.; Constant A.; Schmidt B.; Michel P.; Godignon P.;
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Logic gates; MOSFET; Protons; Radiation effects; Silicon; Silicon carbide; Threshold voltage; Charge Trapping; Electron Irradiation; Mobility; Proton irradiation; SiC MOSFET; SiO2/SiC Interface; Threshold Voltage Shift; Time Bias Stress Instability;

机译：逻辑门; MOSFET;质子;辐射效应;硅;碳化硅;阈值电压;电荷陷阱;电子辐照;迁移率;质子辐照; SiC MOSFET; SiO2 / SiC界面;阈值电压漂移;时间偏置应力不稳定性;

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1. 5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters [J] . Alexandru M., Florentin M., Constant A., Nuclear Science, IEEE Transactions on . 2014,第4期

机译：4H-SiC nMOSFET电参数的5 MeV质子和15 MeV电子辐射效应研究
2. 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters [J] . M. Florentin, M. Alexandru, A. Constant, Materials science forum . 2015,第期

机译：10 MeV质子辐照对4H-SiC nMOSFET电学参数的影响
3. Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons [J] . 李兴冀, 耿洪滨, 兰慕杰, 中国物理：英文版 . 2010,第005期

机译：8 MeV质子，60 MeV Br离子和1 MeV电子对MOS和双极器件的辐射效应
4. 5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters [C] . Alexandru M., Florentin M., Constant A., European Conference on Radiation and Its Effects on Components and Systems . 2013

机译：5 MeV质子和15米温电子辐射效应研究4H-SiC NMOSFET电气参数
5. Thorium and uranium M-shell x-ray production cross sections for 0.4–4.0 MeV protons, 0.4–6.0 MeV helium ions, 4.5–11.3 mev carbon ions, and 4.5–13.5 MeV oxygen ions [D] . Phinney, Lucas C. 2011

机译：0.4和铀M壳X射线产生的横截面，用于0.4–4.0 MeV质子，0.4–6.0 MeV氦离子，4.5–11.3 mev碳离子和4.5–13.5 MeV氧离子
6. Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms [O] . Dongxun Li, Yuming Zhang, Xiaoyan Tang, 2020

机译：5 MeV质子辐射对氮化SiO2 / 4H-SiC MOS电容的影响及相关机制
7. Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H-SiC [O] . Omotoso, Ezekiel, Meyer, W.E. (Walter Ernst), Auret, F.D. (Francois Danie), 2015

机译：5.4meVα粒子辐照对4H-siC上镍肖特基二极管电性能的影响
8. Radiation Effects on A1GaAs/GaAs Solar Cells Using 0.9-3.0MeV Protons and 1.0-1.4MeV Electrons. [R] . lowe, l. f. cappelli, j. r. 1977

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5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

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