Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

机译：基于经验性伪软障方法的间带耦合基于IV和III-V纳米结构的基于经验性假软障方法

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a systematic analysis of the use of the linear combination of bulk bands based on the empirical pseudopotential method to obtain the bandstructure of confined nanostructures. The relevance of interband coupling between conduction and valence bands in III-V materials is highlighted.

机译：本文提出了基于经验性伪能量方法使用散装带的线性组合的系统分析，以获得受限纳米结构的带状结构。突出了III-V材料中的导通和价带之间的间带耦合的相关性。

著录项

来源
《International Conference on Simulation of Semiconductor Processes and Devices》|2018年|373p|共4页
会议地点
作者
Denis Rideau; Gabriel Mugny; Marco Pala; David Esseni;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN3-53;
关键词
conduction bands; energy gap; III-V semiconductors; nanostructured materials; pseudopotential methods; valence bands;

机译：传导带;能隙;III-V半导体;纳米结构材料;伪气通方法;价带;

相似文献

外文文献
中文文献
专利

1. Band structure calculation of GaSe-based nanostructures using empirical pseudopotential method [J] . A V Osadchy, S G Volotovskiy, E D Obraztsova, Journal of Physics: Conference Series . 2016,第1期

机译：GaSe基纳米结构能带结构的经验伪势计算
2. Empirical pseudopotential method with nonspherical passivants for the atomistic study of silicon nanostructures [J] . J. R. Cardenas Physical review. B, Condensed Matter And Materals Physics . 2018,第4期

机译：具有非球形钝化剂的经验pot势方法用于硅纳米结构的原子性研究
3. Empirical pseudopotential method with nonspherical passivants for the atomistic study of silicon nanostructures [J] . Cardenas J. R. Physical review, B . 2018,第4期

机译：具有硅纳米结构原子研究的多孔钝化方法
4. Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures [C] . Denis Rideau, Gabriel Mugny, Marco Pala, International Conference on Simulation of Semiconductor Processes and Devices . 2018

机译：基于经验伪势方法的带间耦合，基于IV和III-V族纳米结构的能带结构计算
5. Study of certain physical properties of semiconductors from group IV, III-V, II-VI and their alloys using pseudopotential theory. [D] . Jivani, Anil Ratilal. 2006

机译：使用伪电位理论研究IV，III-V，II-VI组的半导体及其合金的某些物理性质。
6. Magnetic Properties of Monomer and Dimer Tetrahedral VOx Entities Dispersed on Amorphous Silica-based Materials: Prediction of EPR Parameters from Relativistic DFT Calculations and Broken Symmetry Approach to Exchange Couplings [O] . Piotr Pietrzyk, Zbigniew Sojka -1

机译：分散在非晶硅基材料上的四聚体和二聚体四面体VOx实体的磁性能：从相对论DFT计算和交换耦合的不对称对称方法预测EPR参数
7. Atomic chains of group-IV elements and III-V and II-VI binary compounds studied by a first-principles pseudopotential method [O] . Senger, R.T., Tongay, S., Durgun, E., 2005

机译：用第一性原理假电位方法研究的IV组元素和III-V和II-VI二元化合物的原子链
8. Empirical Pseudopotential Modeling of Antimonide-Based III-V Structures [R] . Magri, R. 2005

机译：基于锑化物的III-V结构的经验赝势模型

Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

摘要

著录项

相似文献

相关主题

期刊订阅