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Temperature performances of bulk MOS transistors for use as temperature sensitive element for bolometer applications

机译：用作辐射热计应用的温度敏感元件的大块MOS晶体管的温度性能

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This paper focuses on the study of thermal performances of MOS transistors for bolometer applications. Series of measurements have been conducted to obtain TCC (Temperature Coefficient of Current) versus gate voltage and temperature curves. The measurements were confronted to atlas simulations, and showed that in the subthreshold region the TCC ranges from 4%/K all the way to 9%/K. It was also determined that gate length does not have an influence on the TCC until short channel effects factor in.

机译：本文重点研究用于辐射热计应用的MOS晶体管的热性能。已经进行了一系列测量，以获得TCC（电流温度系数）对栅极电压和温度的曲线。测量结果与图集模拟相面对，结果表明，在亚阈值区域中，TCC范围从4％/ K一直到9％/ K。还确定了栅极长度直到短沟道效应因素才对TCC产生影响。

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《International Conference on Microelectronics》|2013年|1-4|共4页
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Fuxa Etienne; Yon Jean-Jacques; Jomaah Jalal;
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MOSFET; TCC; bolometer; temperature;

机译：MOSFET; TCC;辐射热计;温度;

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1. Room temperature, very sensitive thermometer using a doubly clamped microelectromechanical beam resonator for bolometer applications [J] . Y. Zhang, Y. Watanabe, S. Hosono, Applied Physics Letters . 2016,第16期

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2. Effects of synergetic and antagonistic additive elements on the thermal performance of engine oils at various bulk temperatures [J] . Abou-Ziyan H., Mahmoud M., Al-Ajmi R., Applied thermal engineering: Design, processes, equipment, economics . 2015,第Null期

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3. Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures [J] . Device and Materials Reliability, IEEE Transactions on . 2011,第1期

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4. Temperature performances of bulk MOS transistors for use as temperature sensitive element for bolometer applications [C] . Fuxa Etienne, Yon Jean-Jacques, Jomaah Jalal International Conference on Microelectronics . 2013

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5. Performance dependence on the nonlinearity and architecture of the room temperature ballistic deflection transistor for logic applications. [D] . Kaushal, Vikas K. 2011

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8. Temperature Sensitive Dynamic Cushioning Model Development and Validation for Equal Thicknesses of Selected Bulk Cushioning Materials. Volume III [R] . Wyskida, R. M., Johannes, J. D., Wilhelm, M. R. 1979

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Temperature performances of bulk MOS transistors for use as temperature sensitive element for bolometer applications

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