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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Fabricating high efficiency solar cells with high sheet resistance emitters by ion implantation and contact resistance modeling
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Fabricating high efficiency solar cells with high sheet resistance emitters by ion implantation and contact resistance modeling

机译：通过离子注入和接触电阻建模制造具有高薄层电阻发射器的高效太阳能电池

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We present improvements in c-Si solar cell performance for high sheet resistance (Rsheet) emitters fabricated by ion implantation. We have investigated the effect of sheet resistance (60–115 Ω/sq) on cell efficiency (CE) and also evaluated the effect of dopant profile shape on the contact resistance for the ion implanted emitters. High efficiency cells, with average CE>19.3%, can be achieved with ion implanted high Rsheet emitters (60–90 Ω/sq) using commercially available screen printed Ag paste. It is to be noted that the best results were obtained for those cells with emitter Rsheet ∼ 70-75 Ω/sq, as the cell performance is limited by the FF, namely front contact resistance (Rc) for emitters with Rsheet > 75 Ω/sq. To better understand the effect of emitter Rsheet and the dopant profile on contact resistance we have used VSE's bottom-up physics-based Technology Computer-Aided Design (TCAD) model to simulate these experimental results. We found that the traditional model of evaluating Rc using the phosphorus surface concentration (Ns) does not accurately predict the increase in Rc and consequently the loss in FF for high Rsheet emitters. We propose an alternative approach to model Rc where the contact depth and its associated dopant concentration (Nd) is employed to calculate Rc. This contact depth is not necessarily zero and may lie below the original Si surface. Our simulated results show that the use of Nd at a depth of the order of 10's of nm below the Si surface leads to better agreement between the experimental and simulated Rseries, FF and CE than assuming that the contact is made with Si at the original wafer surface. The implications of these findings with regards to emitter profile engineering via ion implantation and for- ulation of new pastes to lower Rc of high Rsheet emitters are discussed.
机译：我们介绍了通过离子注入制造的高薄层电阻（Rsheet）发射器的c-Si太阳能电池性能的改进。我们研究了薄层电阻（60–115Ω/ sq）对电池效率（CE）的影响，还评估了掺杂剂轮廓形状对离子注入发射极的接触电阻的影响。离子注入的高Rsheet发射器（60–90Ω/ sq），可以使用市售的丝网印刷Ag糊剂来实现，平均CE> 19.3％的高效电池。要注意的是，对于那些发射极Rsheet约为70-75Ω/ sq的电池，可获得最佳结果，因为电池性能受FF的限制，即Rsheet> 75Ω/ s的发射极的前接触电阻（Rc）。平方为了更好地了解发射极Rsheet和掺杂剂分布对接触电阻的影响，我们使用了VSE基于自底向上的基于物理的技术计算机辅助设计（TCAD）模型来模拟这些实验结果。我们发现，使用磷表面浓度（Ns）评估Rc的传统模型无法准确预测Rc的增加，因此无法预测高Rsheet发射器的FF损失。我们提出了一种替代方法Rc，其中接触深度及其相关的掺杂剂浓度（Nd）用于计算Rc。该接触深度不一定为零，并且可以位于原始Si表面以下。我们的模拟结果表明，与假设在原始晶圆上与Si进行接触相比，在Si表面以下10纳米深度处使用Nd可使实验和模拟的Rseries，FF和CE更好地达成一致表面。讨论了这些发现对通过离子注入和新糊剂的配制来降低高Rsheet发射器的Rc的发射器轮廓工程的意义。

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