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首页> 外文会议>IEEE International Midwest Symposium on Circuits and Systems >Multi-threshold transistors cell for Low Voltage temperature sensing applications
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Multi-threshold transistors cell for Low Voltage temperature sensing applications

机译：用于低压温度传感应用的多阈值晶体管电池

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A new Low Voltage CMOS temperature sensor with low supply sensitivity is introduced. Though operation over a large temperature range is possible, this structure is particularly useful in power/thermal management applications where a rather narrow temperature band is of most concern. The sensor is based upon a multi-threshold 4 transistors cell and uses the temperature dependence of the threshold voltages to sense temperature. The low headroom requirement of the structure allows for very low voltage operation or practical cascoding at nominal supply voltages to further reduce the supply voltage sensitivity. With proper device sizing, a very linear relationship between output voltage and temperature is achieved. Simulation results show that the temperature linearity is robustness to process variations and the cascoded implementation has excellent insensitivity to the power supply voltage. The circuit has been implemented in a 65nm digital process with multiple threshold voltages devices. Simulation results show a temperature nonlinearity of less than 0.5°C over the temperature range of 100∼150°C.
机译：引入了具有低供应灵敏度的新型低压CMOS温度传感器。尽管可以在大的温度范围内进行操作，但这种结构在功率/热管理应用中特别有用，其中一个相当窄的温度带是最关心的。传感器基于多阈值4晶体管单元，并使用阈值电压的温度依赖性来感测温度。该结构的低净值要求允许在标称电源电压下非常低电压操作或实际级联，以进一步降低电源电压灵敏度。通过适当的设备尺寸，实现输出电压和温度之间的非常线性关系。仿真结果表明，温度线性是处理变化的鲁棒性，级联的实现对电源电压具有良好的不敏感性。该电路已在具有多个阈值电压器件的65nm数字过程中实现。仿真结果显示在100~150℃的温度范围内小于0.5℃的温度非线性。

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