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首页> 外文会议>International astronautical congress >EVALUATION AND PREDICTION OF INGAP2/GAAS/GE SOLAR CELL PERFORMANCE IN SPACE RADIATION ENVIRONMENT
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EVALUATION AND PREDICTION OF INGAP2/GAAS/GE SOLAR CELL PERFORMANCE IN SPACE RADIATION ENVIRONMENT

机译：空间辐射环境中INGAP2 / GAAS / GE太阳电池性能的评估和预测

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The space radiation environment is mainly composed of electrons, protons or their combinations. Exposure to these charged particles typically degrades the electrical performance of semiconductor devices, especially less-shielded space solar array, thus limiting the lifetime of the solar array. Therefore, to be used in space, understanding the radiation response of solar cell is extremely important for accurate predictions of the expected mission lifetime. The effects of GEO (Altitude 35,870km, Inclination 0°), MEO (Altitude 21,500km, Inclination 55°) and LEO (Altitude 799km, Inclination 99°) radiation environments are investigated on the degradation of a new type InGaP_2/GaAs/Ge triple-junction solar cell (Manufactured in China). The on-ground irradiation experiments were performed to evaluate radiation effects of electrons and protons on the solar cells, and also to provide experimental data for predictions of the cell performances under the space radiation environments. For these cell types I-V characteristics were obtained as a function of radiation fluence using electrons (1.0, 1.5 and 2.0 MeV) and protons (3, 5, 8 and 10 MeV). Illuminated current—voltage (I—V) characteristics of each sample were measured both before and after irradiation using a Spectrolab X-25 solar simulator under AM0 condition (air mass zero, 1 sun, 25 °C conditions). The prediction results of the performance degradations of the GaAs cells are presented as a function of cell material, and cover glass, and the system orbit and lifetime in the space radiation environments, using the displacement damage dose methodology for analyzing and modeling. This study provides reference data for the design of the GaAs solar arrays in the typical space radiation environments to ensure the security and reliability of on-orbit spacecrafts.
机译：空间辐射环境主要由电子，质子或其组合组成。暴露于这些带电粒子通常会降低半导体器件（尤其是屏蔽程度较低的空间太阳能阵列）的电性能，从而限制了太阳能阵列的寿命。因此，要在太空中使用，了解太阳能电池的辐射响应对于准确预测预期的任务寿命极为重要。研究了GEO（海拔35,870km，倾角0°），MEO（海拔21,500km，倾角55°）和LEO（海拔799km，倾角99°）辐射环境对新型InGaP_2 / GaAs / Ge的降解的影响。三结太阳能电池（中国制造）。进行了地面辐射实验，以评估电子和质子对太阳能电池的辐射效果，并为预测空间辐射环境下的电池性能提供实验数据。对于这些电池类型，使用电子（1.0、1.5和2.0 MeV）和质子（3、5、8和10 MeV）获得了I-V特性作为辐射通量的函数。在AM0条件（空气质量为零，1个太阳，25°C条件下）下，使用Spectrolab X-25太阳模拟器在辐照之前和之后测量了每个样品的照明电流-电压（IV）特性。使用位移损伤剂量方法进行分析和建模，给出了GaAs电池性能下降的预测结果与电池材料，盖玻片以及空间辐射环境中系统轨道和寿命的关系。这项研究为典型的空间辐射环境中的砷化镓太阳能电池阵列的设计提供参考数据，以确保在轨航天器的安全性和可靠性。

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