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首页> 外文会议>International Symposium on Next-Generation Electronics >Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes
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Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes

机译：用单锅法及其在白色发光二极管的应用中不同Cu /以比例的不同Cu / in ratios的合成CuIns 2 -ZNS量子点

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摘要

This paper reports one-pot method toward the synthesis of CuInS/ZnS hybrid nanoparticles. First, CuInS quantum dots (QDs) were synthesized in the noncoordinating solvent octadecene using copper chlorine, indium chlorine and dodecanethiol. Copper indium sulfide (CIS) quantum dots (QDs) for different Cu/In molar ratios of 1/1, 1/2, and 1/4 are synthesized. The band gap energy of CIS QDs is observed to be dependent for Cu/In ratio, exhibiting a higher band gap from more Cu-deficient QDs. The emission wavelengths of all CIS QDs belong to a deep red region (710-780 nm) with relatively low quantum yields (QYs) of 3.4-7.8%. Compared to respective original core QDs, the absorption peaks of CIS/ZnS QDs are blue-shifted, and their emission wavelengths move to a higher energy accordingly, showing a quite tunable emission from yellow to red. The effective surface passivation by a ZnS overlayer results in a dramatic increase in QY of CIS/ZnS QDs in the range of 38-48%. Finally, high luminescent CIS/ZnS QDs with high luminescent PL efficiency are used for white light emitting diode.
机译：本文报告了单盆方法朝着CuIns / ZnS杂交纳米粒子的合成。首先，使用铜氯，铟氯和十二烷硫醇在非环化溶剂十八丙烯中合成Cuins量子点（QDS）。合成不同Cu /摩尔比的氟硫醚（CIS）量子点（QDS）1/1,1 / 2和1/4的摩尔比。观察到CIS QD的带隙能量依赖于Cu /以比率，从更高的Cu缺陷QDS表现出更高的带隙。所有顺式QD的发射波长属于深红色区域（710-780nm），具有3.4-7.8％的相对较低的量子产率（qys）。与相应的原始核心QD相比，CIS / ZnS QD的吸收峰是蓝移，并且它们的发射波长相应地移动到更高的能量，显示出从黄色到红色的相当可调发射。 ZnS覆盖器的有效表面钝化导致CIS / ZnS QDS的QY的显着增加，范围为38-48％。最后，具有高发光PL效率的高发光CIS / ZnS QDS用于白色发光二极管。

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