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Effective medium analysis on the optical properties of silicon nanowire arrays

机译：硅纳米线阵列光学性能的有效介质分析

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In search of next-generation solar cells, silicon nanowire arrays have attracted great attention since they are costeffective and may absorb more light compared to thin-film silicon solar cells. Theoretical studies using finite-different time-domain and transfer matrix methods have been performed to investigate the optical properties of silicon nanowire (SiNW) arrays, however, they are computationally intensive and require periodic condition, which may not be satisfied with most fabricated samples. In the present study, an effective medium analysis is performed to study the optical properties of vertically-aligned SiNWs on Si substrate in the wavelength range from 310 nm to 1100 nm, which is of the most important interest for solar cells. The effective dielectric function of the SiNW layer is obtained from the Bruggeman approximation. Thin-film optics formulae are employed to calculate the reflectance, transmittance and absorptance of the SiNWs on silicon substrate at normal incidence. The effect of geometric parameters such as filling ratio and wire length will be investigated to understand the light absorption and to facilitate the optimal design of highperformance SiNW solar cells.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译：为了寻找下一代太阳能电池，硅纳米线阵列引起了极大的关注，因为它们是与薄膜硅太阳能电池相比的成本有效的并且可以吸收更多的光。已经进行了使用有限不同时域和转移矩阵方法的理论研究以研究硅纳米线（SINW）阵列的光学性质，然而，它们是计算密集的并且需要周期性的条件，这可能对最具制造的样品可能不满足。在本研究中，进行有效介质分析以研究从310nm至1100nm的波长范围内的Si衬底上的垂直对齐的SINWS的光学性质，这对于太阳能电池来说是最重要的兴趣。从Brugmeman近似获得SINW层的有效介电函数。用于在正常入射下计算硅衬底上SINWS的反射率，透射率和吸收率的薄膜光学公式。将研究几何参数如填充比和线材长度的影响，以了解光吸收，并便于高性能SINW太阳能电池的最佳设计。©（2012）光学仪表工程师的版权协会（SPIE）。仅供个人使用的摘要下载。

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