Thermal effects of TSV (through silicon via) with void

机译：TSV（通过硅过孔）的热效应，带有空隙

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Duo to the TSV fabrication process, the void or stream often exists in the TSV. As we all know the void and stream cannot easily being avoided, the thermal mechanical reliability of TSV integrated circuit (IC) shall be studied deeply for evaluating the fatigue life of the IC products and rearranging the location of TSVs to relieving thermal issues. In addition, the thermal mechanism of void model is different from the vertical TSV. Therefore, it is meaningful and significant to study the thermal stability of void model. This paper evaluates the thermal mechanical stability during the change of the void location and size by finite element method (FEM). The interfacial lines of void TSV suffer different thermal stress and strain induced by the unbalanced deformation of the void, and the interaction of void and TSV.

机译：在TSV制造过程中，TSV中经常存在空隙或流。众所周知，不能轻易避免空隙和流，因此应深入研究TSV集成电路（IC）的热机械可靠性，以评估IC产品的疲劳寿命，并重新安排TSV的位置以缓解热问题。另外，空洞模型的热机制不同于垂直TSV。因此，研究空隙模型的热稳定性具有重要意义。本文通过有限元方法（FEM）评估了空隙位置和尺寸变化期间的热机械稳定性。空隙TSV的界面线承受由空隙的不平衡变形以及空隙与TSV的相互作用引起的不同的热应力和应变。

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《IEEE Electronics Packaging Technology Conference》|2014年|307-312|共6页
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Yunna Sun; Hui-Yeol Kim; Yan Wang; Guifu Ding; Junhong Zhao; Hong Wang;
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deformation; fatigue; finite element analysis; integrated circuit packaging; integrated circuit reliability; mechanical stability; stress-strain relations; thermal stability; three-dimensional integrated circuits; voids (solid); TSV integrated circuit; fatigue life; finite element method; thermal mechanical reliability; thermal mechanical stability; thermal strain; thermal stress; through silicon vias; void deformation; void interfacial lines; void location; void model; void size; void-TSV interaction; Integrated circuit modeling; Stability analysis; Stress; Thermal stability; Thermal stresses; Through-silicon vias;

机译：变形;疲劳;有限元分析;集成电路封装;集成电路可靠性;机械稳定性;应力-应变关系;热稳定性;三维集成电路;空隙（固体）; TSV集成电路;疲劳寿命;有限元法;热机械可靠性;热机械稳定性;热应变;热应力;硅通孔;空洞变形;空洞界面线;空洞位置;空洞模型;空洞尺寸;空洞-TSV相互作用;集成电路建模;稳定性分析;应力;热稳定性;热应力;硅通孔;

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1. Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP) [J] . John H. Lau, Tang Gong Yue Microelectronics & Reliability . 2012,第11期

机译：TSV（硅通孔）对3D IC集成系统级封装（SiP）的热性能的影响
2. 3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy [J] . LayWai Kong, Andrew C. Rudack, Peter Krueger, Microelectronic Engineering . 2012,第Apra期

机译：3D互连：使用X射线显微镜观察各种温度下填充铜的硅通孔（TSV）中引起的挤压和空隙
3. Effects of Copper Plasticity on the Induction of Stress in Silicon from Copper Through-Silicon Vias (TSVs) for 3D Integrated Circuits [J] . Benjamin Backes, Colin McDonough, Larry Smith, Journal of Electronic Testing: Theory and Applications: Theory and Applications . 2012,第1期

机译：铜可塑性对3D集成电路的硅通孔（TSV）中硅中应力诱导的影响
4. Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy [C] . L. W. Kong Conference on metrology, inspection, and process control for microlithography XXVI . 2012

机译：通过实验室X射线显微镜测量保形填充的硅通孔（TSV）中的热诱导空隙生长
5. Applying X-ray microscopy and finite element modeling (FEM) to identify the mechanism of stress-assisted void growth in through silicon via (TSV) [D] . Kong, Lay Wai 2011

机译：应用X射线显微镜和有限元建模（FEM）来确定硅通孔（TSV）中应力辅助空隙生长的机制
6. Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV) [O] . Youjung Kim, Sanghyun Jin, Kimoon Park, 2020

机译：脉冲电流和预退火对通过硅通孔（TSV）铜热挤出的影响
7. Interfacial Effects During Thermal Cycling of Cu-Filled Through-Silicon Vias (TSV) [O] . P. Kumar, I. Dutta, M.S. Bakir 2011

机译：铜填充硅通孔（TSV）热循环过程中的界面效应
8. Effects of radiation damage and impurities on void dynamics in silicon [R] . Donnelly, S. E., Vishnyakov, V. M., Birtcher, R. C., 2000

机译：辐射损伤和杂质对硅中空洞动力学的影响

Thermal effects of TSV (through silicon via) with void

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