Through silicon via (TSV) scallop smoothening technique

机译：硅穿孔（TSV）扇贝平滑技术

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To achieve high performance in a small form factor and to overcome Moore Law's by still achieving more transistors on microchips are through 2.5D and 3D chips stacking [1]. Through Si via (TSV) is the key to 2.5 D and 3D technology and is gaining more and more interest from many giant chipmakers [2]. Various defects may form during silicon etch in TSV due to the etching mechanism [3].

机译：为了通过小尺寸实现高性能并克服摩尔定律，而仍通过在2.5D和3D芯片上堆叠[1]来在微芯片上实现更多的晶体管，从而克服摩尔定律[1]。硅直通（TSV）是2.5 D和3D技术的关键，并且越来越受到许多大型芯片制造商的关注[2]。由于蚀刻机理[3]，在TSV中的硅蚀刻过程中可能会形成各种缺陷。

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《IEEE Electronics Packaging Technology Conference》|2014年|676-678|共3页
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Goon Heng Wong; King Jien Chui; Guan Kian Lau; Woon Leng Loh; Li HongYu;
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etching; three-dimensional integrated circuits; 3D chip stacking; 3D technology; Moore law; Si; TSV scallop smoothening technique; etching mechanism; microchip; through silicon via technology; Cleaning; Dielectrics; Etching; Microelectronics; Silicon; Three-dimensional displays; Through-silicon vias;

机译：蚀刻;三维集成电路; 3D芯片堆叠; 3D技术;摩尔定律; Si; TSV扇贝平滑技术;蚀刻机理;微芯片;硅通孔技术;清洗;电介质;蚀刻;微电子学;硅;三维显示器;硅通孔;

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专利

1. Electrical characteristics of a novel interposer technique using ultra-low-resistivity silicon-pillars with polymer insulation as TSVs [J] . Wang Weijiang, Yan Yangyang, Ding Yingtao, Microelectronic Engineering . 2015,第apra期

机译：使用具有聚合物绝缘的超低电阻硅柱作为TSV的新型中介层技术的电气特性
2. Isolation Techniques Against Substrate Noise Coupling Utilizing Through Silicon Via (TSV) Process for RF/Mixed-Signal SoCs [J] . Uemura S. Solid-State Circuits, IEEE Journal of . 2012,第4期

机译：通过硅过孔（TSV）工艺针对RF /混合信号SoC进行的衬底噪声耦合隔离技术
3. Stress evolution in the metal layers of TSVs with Bosch scallops [J] . A.P. Singulani, H. Ceric, S. Selberherr Microelectronics & Reliability . 2013,第9a11期

机译：带有Bosch扇贝的TSV的金属层中的应力演化
4. Through silicon via (TSV) scallop smoothening technique [C] . Goon Heng Wong, King Jien Chui, Guan Kian Lau, IEEE Electronics Packaging Technology Conference . 2014

机译：通过硅通孔（TSV）扇贝平滑技术
5. Analytical Characterization of Electrolyte and Additives for High Quality Copper Plating of Through Silicon Vias (TSVs) [D] . Wu, Hailong. 2013

机译：硅通孔（TSV）的高质量镀铜的电解质和添加剂的分析特性
6. Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV) [O] . Youjung Kim, Sanghyun Jin, Kimoon Park, 2020

机译：脉冲电流和预退火对通过硅通孔（TSV）铜热挤出的影响
7. Temperature-dependent Thermal Stress Determination for Through-Silicon-Vias (TSVs) by Combining Bending Beam Technique with Finite Element Analysis [O] . Kuan H. Lu, Suk-kyu Ryu, Qiu Zhao, 2013

机译：结合弯曲梁技术和有限元分析确定硅通孔（TsVs）的温度依赖性热应力
8. Problem of the Selection of an A-Posteriori Error Indicator Based on Smoothening Techniques. [R] . Babuska, I. M., Rodriguez, R. 1991

机译：基于平滑技术的a-后验误差指标选择问题。

Through silicon via (TSV) scallop smoothening technique

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