首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >FABRICATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELLS BY INKJET PATTERNING
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FABRICATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELLS BY INKJET PATTERNING

机译:射流点阵法制备相互反接的硅异质结太阳能电池

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Interdigitated back contact silicon heterojunction solar cells were fabricated not by photolithography but by inkjet patterning. In this process, the print quality should influence on the device dimensions, and the device simulation showed that the device properties strongly depend on the overlap width of p and n strip (n/p overlap) and the width of the uncovered p-strip without the p-electrode and the n/p overlap. By the patterning using a photoresist resin as a resist ink, the total widths of the n/p overlap and the uncovered p-strip were rather wide, 120~280μm, and the cell efficiency was 10.3%. For the finer patterning to improve the cell properties, the application of a new drawing ink has been undertaken.
机译:叉指式背接触硅异质结太阳能电池不是通过光刻法而是通过喷墨图案法制造的。在此过程中,打印质量将影响设备尺寸,并且设备仿真显示,设备属性很大程度上取决于p和n条带的重叠宽度(n / p重叠)以及未覆盖的p条的宽度p电极和n / p重叠。通过使用光致抗蚀剂树脂作为抗蚀剂油墨进行构图,n / p的总宽度和未覆盖的p-strip的总宽度相当宽,为120〜280μm,单元效率为10.3%。为了更好地图案化以改善电池性能,已经进行了新的绘图油墨的应用。

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