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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >HYDROGEN PASSIVATION FOR MULTI-CRYSTALLINE AND QUASI-MONO CAST SILICON WAFERS: A PATHWAY TO LOW COST, HIGH EFFICIENCY SOLAR CELLS?
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HYDROGEN PASSIVATION FOR MULTI-CRYSTALLINE AND QUASI-MONO CAST SILICON WAFERS: A PATHWAY TO LOW COST, HIGH EFFICIENCY SOLAR CELLS?

机译：多晶和准单晶硅硅晶圆的氢钝化：低成本，高效率太阳能电池的途径？

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摘要

Large enhancements in the effective minority carrier lifetime and therefore implied open circuit voltage (iV_(oc)) are achieved through hydrogen passivation both with and without gettering on standard commercial multi-crystalline wafers and quasi-mono wafers produced using the seeded cast method. For full cell structures on large area p-type multi-crystalline wafers from the edge of a cast ingot, iV_(oc) of the material improved from 645 mV to over 700 mV through passivation of the grain boundaries, dislocations, impurities and other defects within the device using atomic hydrogen released from the passivating dielectric layers. On heavily dislocated quasi-mono material from the central region of a seeded-cast ingot, low injection effective minority carrier lifetimes were increased from 8 us to over 160 μs (without gettering) with a substantial reduction in the recombination activity associated with dislocations through the use of an advanced hydrogenation process incorporating minority carrier injection. The samples yielded iV_(oc) in excess of 725 mV, approaching that of boron-doped CZ wafers processed in parallel.
机译：有效氢的有效少数载流子寿命大大提高，因此通过氢钝化可以实现氢的钝化，无论是否在使用种子浇铸法生产的标准商用多晶晶圆和准单晶晶圆上进行吸杂。对于从铸锭边缘开始的大面积p型多晶硅晶片上的全晶胞结构，材料的iV_（oc）通过钝化晶界，位错，杂质和其他缺陷而从645 mV改善到700 mV以上。在器件中使用从钝化介电层释放的原子氢。在从种晶铸锭中心区域严重脱位的准单质材料上，低注入有效少数载流子寿命从8 us增加到超过160μs（无吸气），并且与通过位错脱位相关的重组活性大大降低了。使用结合少数载流子注入的先进氢化工艺。样品产生的iV_（oc）超过725 mV，接近平行处理的掺硼CZ晶片的iV_（oc）。

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