首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >THE INVESTIGATION OF INDUSTRIAL PERC CELLS WITH EFFICIENCIES UP TO 19.49 USING P-TYPE MONOCAST SILICON
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THE INVESTIGATION OF INDUSTRIAL PERC CELLS WITH EFFICIENCIES UP TO 19.49 USING P-TYPE MONOCAST SILICON

机译:使用P型单晶硅对效率高达19.49%的工业PERC细胞进行调查

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In this work we evaluate the performance of monocast PERC cells which include the impact of the rear side roughness and surface performance among mono, multi and grain region. With platen rear surface, both mono-crystalline (Cz-Si) and mc-Si regions showed lower surface recombination velocity, better light trapping and local BSF contact formation. Grain region showed almost same surface roughness in all conditions which resulted in similar QE and PL intensity. The champion cell achieved efficiency of 19.49%.
机译:在这项工作中,我们评估了单播PERC电池的性能,其中包括单,多和晶粒区域的背面粗糙度和表面性能的影响。在压板后表面上,单晶(Cz-Si)和mc-Si区域均显示出较低的表面复合速度,更好的光捕获和局部BSF接触形成。晶粒区域在所有条件下均表现出几乎相同的表面粗糙度,从而导致相似的QE和PL强度。冠军电池达到了19.49%的效率。

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