Analysis of electric field and electrostatic potential distributions in porphyrin-coated silicon nanowire field-effect transistors

机译：卟啉包覆的硅纳米线场效应晶体管的电场和静电势分布分析

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The aim of this work is to analyze the electric field and electric potential distributions in undoped silicon nanowire Schottky barrier field-effect transistors (SB-FETs) with a backgate configuration covered by chemical compound for sensor application. In this work we model porphyrin-coated silicon nanowire FETs (SiNW-FETs) and examine how the porphyrin covering the surface of the SiNW-FETs influences the electric field and electrostatic potential distributions. Especially we analyze the 1D electrostatic potential along the axis of the silicon nanowire channel for different values of gate voltages for the subsequent electron transport characteristics.

机译：这项工作的目的是分析具有背栅配置的无掺杂硅纳米线肖特基势垒场效应晶体管（SB-FET）的电场和电势分布，该背栅配置被化合物覆盖，用于传感器应用。在这项工作中，我们对涂有卟啉的硅纳米线FET（SiNW-FET）进行建模，并研究覆盖SiNW-FET表面的卟啉如何影响电场和静电势分布。特别是，我们分析了沿硅纳米线通道轴的一维静电势，以求出不同的栅极电压值，以实现后续的电子传输特性。

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《Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology》|2014年|119-122|共4页
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Bodilovska Daria; Nozaki Daijiro; Baek Eunhye;
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Electric fields; Electric potential; Electrostatics; Field effect transistors; Logic gates; Silicon; electric field; electrostatic potential; field-effect transistors; porphyrin; silicone nanowire;

机译：电场;电位;静电;场效应晶体管;逻辑门硅;电场;静电势场效应晶体管;卟啉硅纳米线;

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专利

1. Optical switching of porphyrin-coated silicon nanowire field effect transistors [J] . Winkelmann CB, Ionica I, Chevalier X, Nano letters . 2007,第6期

机译：卟啉涂层硅纳米线场效应晶体管的光开关
2. Proton Irradiation-Induced Electrostatic Modulation in ZnO Nanowire Field-Effect Transistors With Bilayer Gate Dielectric [J] . Jo G., Hong W.-K., Choe M., Nanotechnology, IEEE Transactions on . 2012,第5期

机译：带有双层栅介质的ZnO纳米线场效应晶体管中的质子辐射诱导的静电调制
3. Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses [J] . Liu W., Liou J. J., Jiang Y., Electron Device Letters, IEEE . 2010,第9期

机译：硅纳米线场效应晶体管在静电放电应力作用下的失效分析
4. Analysis of electric field and electrostatic potential distributions in porphyrin-coated silicon nanowire field-effect transistors [C] . Bodilovska Daria, Nozaki Daijiro, Baek Eunhye Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology . 2014

机译：卟啉涂层硅氧化硅纳米线效应晶体管中电场和静电电位分布的分析
5. Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor. [D] . Gregory, John Walter. 1992

机译：钡四氟镁/二氧化硅铁电场效应晶体管的制造和器件表征。
6. Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors [O] . Mihee Uhm, Jin-Moo Lee, Jieun Lee, 2019

机译：基于CMP-NANA探针和自上而下处理的硅纳米线场效应晶体管的血凝素超灵敏电检测用于流感病毒的现场检测
7. Analysis of 1D and 3D Distribution of Electric Potential in the Porphy-rin-coated Silicon Nanowire Field-effect Transistors [O] . D. S. Bodilovska 2014

机译：孔隙涂层硅纳米线场效应晶体管中的1D和3D分布的分析

Analysis of electric field and electrostatic potential distributions in porphyrin-coated silicon nanowire field-effect transistors

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