Field emission of electrochemical graphene oxide

机译：电化学氧化石墨烯的场发射

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Field emission device of graphene oxide (GO) with parallel plate-type structure was successfully produced with highly oriented pyrolytic graphite (HOPG) by electrochemical exfoliation. The material, chemical characteristics and material surface structure were analyzed with Raman spectroscopy, XRD, SEM and XPS as well. The best field emission enhancement factor β is 1878.5, and the turn-on field defined current equals to 1μA, max emission current are 3.73V/μm and 12μA, respectively. GO is a good candidate for field emission device.

机译：采用高取向热解石墨（HOPG），通过电化学剥落法成功制备了具有平行板型结构的氧化石墨烯（GO）场致发射器件。用拉曼光谱，XRD，SEM和XPS对材料，化学特性和材料表面结构进行了分析。最佳场发射增强因子β为1878.5，开场定义电流等于1μA，最大发射电流分别为3.73V /μm和12μA。 GO是场发射器件的理想选择。

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《International Symposium on Next-Generation Electronics》|2015年|1-4|共4页
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Yi-Tsung Chang; Yun-Jhung Chih; Bo-Sing Lin; Chun Hu Chen;
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electrochemical graphene oxide; field emission; highly oriented pyrolytic graphite (HOPG);

机译：电化学氧化石墨烯;场发射;高取向热解石墨（HOPG）;

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3. A polymer composite consists of electrochemical reduced graphene oxide/polyimide/chemical reduced graphene oxide for effective preparation of SnSe by electrochemical atomic layer deposition method with enhanced electrochemical performance and surface area [J] . Shengjiao Yu, Yimin Jiang, Chunming Wang Electrochimica Acta . 2013,第Null期

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4. Field emission of electrochemical graphene oxide [C] . Yi-Tsung Chang, Yun-Jhung Chih, Bo-Sing Lin, International Symposium on Next-Generation Electronics . 2015

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Field emission of electrochemical graphene oxide

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