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Progress of AlGaInP red laser diodes and beyond

机译:AlGaInP红色激光二极管的研究进展

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High-performance AlGaInP red laser diodes (LDs) and light emitting diodes (LEDs) play a key role in the light sources for displays, sensors, medicals, plants, and optical information areas. AlGaInP crystals grown by metal organic chemical vapor deposition method have to solve many issues such as band gap narrowing, low p-carrier concentration, 2-dimentional crystal growth, and hillocks on the crystal surface. We found an innovative solution that introduces (100) GaAs substrates with misorientation towards the [011] direction at the world-first in 1988. This paper presents about development history of AlGaInP laser diodes, some merits by using the substrate, and high performances laser diodes, which are fabricated by combining the substrates and strain compensated multiple quantum wells.
机译:高性能AlGaInP红色激光二极管(LD)和发光二极管(LED)在显示器,传感器,医疗,植物和光学信息领域的光源中起着关键作用。通过金属有机化学气相沉积法生长的AlGaInP晶体必须解决许多问题,例如带隙变窄,p载流子浓度低,二维晶体生长以及晶体表面的小丘。我们发现了一种创新的解决方案,该解决方案在1988年全球首次引入了[100]取向向[011]方向错误的GaAs衬底。本文介绍了AlGaInP激光二极管的发展历史,使用该衬底的一些优点以及高性能的激光器二极管,是通过将衬底和应变补偿的多个量子阱组合在一起而制成的。

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