DC and RF characteristics of graphene FET using analytical approach

机译：使用分析方法的石墨烯FET的DC和RF特性

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This paper presents a detailed study of DC and RF characteristics of GFET using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cut-off frequency. A significant shift of the Dirac point as well as an asymmetrical ambipolar behavior is observed on the transfer curve.

机译：本文使用分析方法对GFET的DC和RF特性进行了详细研究。就更快的饱和度和极高的截止频率而言，GFET表现出令人鼓舞的性能。在转移曲线上观察到狄拉克点的明显偏移以及不对称的双极性行为。

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《International Conference on Electrical Engineering and Information Communication Technology》|2015年|1-4|共4页
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Fahim-Al-Fattah Md; Rahman Md Tawabur; Islam Md Sherajul; Bhuiyan Ag; Khan Asif Abdullah;
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field effect transistors; graphene; graphene devices; Dirac point; analytical approach; asymmetrical ambipolar behavior; graphene FET; transfer curve; Graphene; Logic gates; Performance evaluation; RNA; Ambipolarity; Cut-off Frequency; DC Characteristics; Graphene; Graphene FET;

机译：场效应晶体管;石墨烯;石墨烯器件;狄拉克点;分析方法;不对称双极性行为;石墨烯FET;转移曲线;石墨烯;逻辑门;性能评估; RNA;双极性;截止频率;直流特性;石墨烯;石墨烯FET;

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1. 逆Stone-Thrower-Wales缺陷和9AGNR双栅石墨烯纳米带FET的传输特性 [J] . Mohammad Bagher NASROLLAHNEJAD, Parviz KESHAVARZI 中南大学学报（英文版） . 2019,第011期
2. A Study on Theoretical Performance of Graphene FET using Analytical Approach with Reference to High Cutoff Frequency [J] . Fahim-Al-Fattah, Tawabur Rahman, Sherajul Islam, International journal of nanoscience . 2016,第3期

机译：高截止频率的解析法研究石墨烯FET的理论性能
3. A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization [J] . Aslam Mohd, Sharma Dheeraj, Yadav Shivendra, Applied Physics . 2018,第4期

机译：通过改善电荷等离子体TFET的双极性传导来增强DC / RF特性的新设计方法：建议和优化
4. Impact of phonon scattering on digital characteristics and RF performance of graphene nanoribbon FETs [J] . Superlattices and microstructures . 2019,第Apra期

机译：声子散射对石墨烯纳米带FET的数字特性和RF性能的影响
5. DC and RF characteristics of graphene FET using analytical approach [C] . Fahim-Al-Fattah Md, Rahman Md Tawabur, Islam Md Sherajul, International Conference on Electrical Engineering and Information Communication Technology . 2015

机译：使用分析方法的石墨烯FET的直流和RF特性
6. Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes [D] . Sinha, Dhiraj P. 2014

机译：支持石墨烯界面的基本研究：石墨烯场效应晶体管（FET）中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
7. An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications [O] . Elnaz Akbari, Vijay Kumar Arora, Aria Enzevaee, 2014

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DC and RF characteristics of graphene FET using analytical approach

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