Performance comparison of Si and Ge nanowire FET: A NEGF study

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• 来源
  《》|2015年|1-4|共4页
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• 作者

  Iztihad Hossain Md; Khan Touhid; Sufian Abu; Alam Md Nur Kutubul; Mollah Md Nurunnabi; Islam Md Rafiqul;

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• 关键词

  Green's function methods; Poisson equation; elemental semiconductors; field effect transistors; germanium; nanowires; semiconductor device models; silicon; Ge; NEGF transport equation; NW FET; Poisson's equation; Si; ballistic performance; current-voltage characteristic; field effect transistors; gate metal work function engineering; nanowire FET; nonequilibrium Green's function; off-state current; on-state current; size 12 nm; size 3 nm; Field effect transistors; Silicon; Ballistic transport; Ge; High on current; Nanowire; Si;

  机译：格林函数法;泊松方程;元素半导体;场效应晶体管;锗;纳米线;半导体器件模型;硅;锗; NEGF输运方程; NW FET;泊松方程;硅;弹道性能;电流-电压特性;场效应晶体管;栅极金属功函数工程;纳米线FET;非平衡格林函数;断态电流;导通电流;尺寸12 nm;尺寸3 nm;场效应晶体管;硅;弹道传输; Ge;高导通电流;纳米线; Si;