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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Less than 10–13W weak light response for quantum dots photodetector at room temprature
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Less than 10–13W weak light response for quantum dots photodetector at room temprature

机译：室温下量子点光电探测器的光响应小于10-13W

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摘要

In the paper, we report a high photoexcited carrier multiplication photodetector operating at room temperature. The photodetector has double AlAs barriers in which a layer of InAs self-assembled quantum dots and thin quantum well is embedded in the center of the GaAs quantum well. Unlike previous AlGaAs QD-RTD, its shows high sensitivity to the weak light irradiation at low bias voltage and the operating temperature 300 K. Its current responsivity can reach about 7 × 10 A/W when 0.01pw 633nm light power and -0.5V bias added. And its response voltage of the capacitance transresistance amplifiers (CTIA) readout circuit shows 7mV at 80μs integration time and 300K. The readout voltage responsivity has reached about 2.7×10 V/W. This high multiplication factor is achieved by the quantum dot induced voltage in the QD layer. The high sensitivity features of the photodetector make a promising choice for medical diagnosis, biomolecular science and environmental protection biological samples.
机译：在本文中，我们报道了一种在室温下工作的高光激发载流子倍增光电探测器。光电探测器具有双重AlAs势垒，其中InAs自组装量子点和薄量子阱层嵌入GaAs量子阱的中心。与以前的AlGaAs QD-RTD不同，它对低偏置电压和300 K的工作温度下的弱光辐照具有很高的灵敏度。当0.01pw 633nm光功率和-0.5V偏置电压时，其电流响应可达到约7×10 A / W。添加。电容跨阻放大器（CTIA）读出电路的响应电压在80μs积分时间和300K时显示7mV。读出电压响应度已达到约2.7×10 V / W。该高倍增系数是通过QD层中的量子点感应电压来实现的。光电探测器的高灵敏度特性使其成为医学诊断，生物分子科学和环保生物样品的有前途的选择。

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