• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>IEEE International Conference on ASIC >Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform
【24h】

Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform

机译：基于FPGA测试平台的外部磁场和高温干扰对MRAM可靠性的影响

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

As the semiconductor manufacturing technology continuously scales down, the working memory, such as SRAM and DRAM, suffers from the issues of dramatic leakage and power consumption. Non-volatile memories are proposed to deal with these problems. Among them, MRAM is one of the most promising candidates for DRAM replacement. However, MRAM is sensitive to external magnetic field and high temperature disturbance theoretically. In this paper, we investigate the impacts of external magnetic field and high temperature disturbance on MRAM and set up a test platform based on FPGA to analyze MRAM reliability under different external environment. Test results show that MRAM has a good thermal reliability but a notable sensitivity to external magnetic field disturbance.
机译：随着半导体制造技术的不断缩小，诸如SRAM和DRAM之类的工作存储器会遭受大量泄漏和功耗的问题。提出了非易失性存储器来解决这些问题。其中，MRAM是替代DRAM的最有前途的候选人之一。但是，MRAM理论上对外部磁场和高温干扰敏感。本文研究了外部磁场和高温干扰对MRAM的影响，建立了基于FPGA的测试平台，以分析不同外部环境下MRAM的可靠性。测试结果表明，MRAM具有良好的热可靠性，但对外部磁场干扰具有显着的敏感性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号