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首页> 外文会议>ARFTG Microwave Measurement Conference >Frequency-scalable nonlinear behavioral transistor model from single frequency X-parameters based on time-reversal transformation properties (INVITED)
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Frequency-scalable nonlinear behavioral transistor model from single frequency X-parameters based on time-reversal transformation properties (INVITED)

机译：基于时间反转变换特性的单频X参数的可缩放频率的非线性行为晶体管模型（已邀请）

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摘要

This paper presents a powerful new method that generates a frequency-scalable nonlinear simulation model from single-frequency large-signal transistor X-parameter data. The method is based on a novel orthogonal identification (direct extraction) of current source and charge source contributions to the spectrally rich port currents under large-signal conditions. Explicit decomposition formulae, applied entirely in the frequency domain, are derived in terms of sensitivity functions at pairs of large-signal operating points related to one-another by time-reversal transformation. The method is applied and validated with respect to data from a measurement-based model of a pHEMT transistor. It is demonstrated that the scalable model can predict the nonlinear performance of the transistor over several orders of magnitude in frequency, all from X-parameters at a single fundamental frequency.
机译：本文提出了一种强大的新方法，该方法可以从单频大信号晶体管X参数数据生成可缩放频率的非线性仿真模型。该方法基于电流信号和电荷源对大信号条件下频谱丰富的端口电流的贡献的新颖的正交识别（直接提取）。通过时间反转变换，在相互关联的大信号工作点对的敏感函数上，导出了完全在频域中使用的显式分解公式。关于来自pHEMT晶体管的基于测量的模型的数据，该方法被应用和验证。事实证明，可伸缩模型可以在单个基频上的X参数下，在几个数量级的频率上预测晶体管的非线性性能。

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