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Device simulation and modeling of RRAM switching processes

机译：RRAM切换过程的设备仿真和建模

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On the emerging nonvolatile memory (NVM) devices, resistive-switching RAMs (ReRAM or RRAM), are considered as promising next-generation structures. All types of RRAMs (TMO, CBRAM, CMO, and etc.) work under the same principle of conductive-filament forming and rupturing in the switching layer of the two-terminal devices. This switching mechanism is to differentiate RRAM from other types of NVMs such as PCM (phase-change memory) and STT-MRAM (spin-transfer torque magnetic RAM). This talk describes the device simulation and modeling of switching process in RRAMs and in particular, the conductive-bridge RAMs (CBRAMs). Specifically, 3D kinetic Monte-Carlo (3D-KMC) simulation and a compact model for the forming of filament will be presented. A review of state-of-the-art in this research field is provided.
机译：在新兴的非易失性存储器（NVM）设备上，电阻切换RAM（ReRAM或RRAM）被认为是有前途的下一代结构。所有类型的RRAM（TMO，CBRAM，CMO等）都在两端设备的开关层中导电丝形成和破裂的相同原理下工作。这种切换机制是为了将RRAM与其他类型的NVM（例如PCM（相变存储器）和STT-MRAM（自旋转扭矩磁RAM））区分开来。本演讲描述了RRAM（尤其是导电桥RAM（CBRAM））中开关过程的设备仿真和建模。具体来说，将介绍3D动力学蒙特卡洛（3D-KMC）模拟和用于形成长丝的紧凑模型。提供了该研究领域中的最新技术的综述。

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