La ion-doping effect in TiO2-based resistive switching memory

机译：TiO2基电阻开关存储器中的La离子掺杂效应

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Trivalent metal ions (La) were doped into a solution-synthesized TiO2 film, and the corresponding resistive switching characteristics were investigated in relation to the oxygen vacancies and chemical composition. The dopants' effects on both electronic structures and vacancy-formation stability of conductive filament structures are discussed.

机译：将三价金属离子（La）掺杂到溶液合成的TiO2膜中，并研究了与氧空位和化学组成有关的相应的电阻开关特性。讨论了掺杂剂对导电细丝结构的电子结构和空位形成稳定性的影响。

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《IEEE International Nanoelectronics Conference》|2016年|1-2|共2页
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Yuzhou Zhou; Gang Li; Shaoan Yan; Minghua Tang;
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关键词
Switches; Films; Ions; Photonic band gap; Metals; Doping; Discrete Fourier transforms;

机译：开关;薄膜;离子;光子带隙;金属;掺杂;离散傅立叶变换;

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专利

1. Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008) [J] . Liu Li-Feng, Kang Jin-Feng, Tang Hao, Japanese journal of applied physics . 2017,第10期

机译：Gd掺杂改善了基于TiO2的电阻存储器件的电阻开关特性（vol 47，pg 2710，2008）
2. Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells [J] . Tornil-Sin S., Siminiceanu R.I., Sung Y.M., Device and Materials Reliability, IEEE Transactions on . 2013,第1期

机译：基于氮化锆的电阻切换存储单元中观察到的双极电阻切换现象和电阻切换机制
3. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device [J] . Wu Xinghui, Zhang Qiuhui, Cui Nana, Japanese journal of applied physics . 2018,第6期

机译：氧化钨/氧化铟锡/金记忆装置中的氧离子迁移调制的双极电阻和互补电阻切换
4. La ion-doping effect in TiO2-based resistive switching memory [C] . Yuzhou Zhou, Gang Li, Shaoan Yan, IEEE International Nanoelectronics Conference . 2016

机译：TiO2基电阻切换存储器中的La离子掺杂效果
5. Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes [D] . Butcher, Brian Jerad. 2013

机译：基于开关过程的建模控制非易失性铪 - 氧化物电阻开关存储器的变异性
6. Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory [O] . Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, 2017

机译：基于SiN的电阻切换存储器中的自相容双极电阻切换
7. In Situ Biasing TEM Characterization of Resistive Switching Phenomena in TiO2-based RRAM [O] . Jonghan Kwon, Abhishek A. Sharma, James A. Bain, 2014

机译：基于TiO2的RRAM电阻切换现象的原位偏置眼镜

La ion-doping effect in TiO2-based resistive switching memory

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