A 230.5–238.8-GHz magnetically coupled triple-push oscillator with inductive tuning for data transmission in 45-nm CMOS

机译：一个230.5-238.8-GHz磁耦合三联振荡器，具有电感调整，用于45-NM CMOS中的数据传输

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A scalable coupled triple-push voltage-controlled oscillator (VCO) based on inductor switching is analyzed and proposed for data transmission via binary frequency shift keying (BFSK) at sub-terahertz (THz) frequencies in 45nm predictive CMOS bulk technology. Inductive switching enables better quality factors above 100GHz due to the increasing losses associated with capacitors. Novel inductor switching technique is proposed in order to enable easy coupling and wide tuning range at the same time for data transmission above 200GHz. Simulation results suggests that 12.3Gbps data rate is possible to be achieved. -12.4dBm output power is achieved with only a variation of 0.2dB in 7.4GHz bandwidth. Oscillation frequency can be tuned from 224GHz to 231.4GHz for single core VCO. Power consumption is 15.5mW for one core. The proposed oscillator is easy to magnetically couple from gate inductors to generate higher output powers depending on the transmission distance and losses. Two coupled VCO is implemented as a proof of concept and reaches up to -10.5dBm output power with a bandwidth of 8.25GHz. To the authors knowledge, this is the first VCO above 200GHz that uses inductor switching and BFSK.

机译：基于电感器切换的可伸缩耦合的三维推动电压控制振荡器（VCO）分析并提出了通过在45nm预测CMOS批量技术的Sub-Terahertz（THz）频率下的二进制频移键控（BFSK）进行数据传输。由于与电容器相关的损耗增加，电感切换使得能够更高100GHz的质量因素。提出了新颖的电感器切换技术，以便在200GHz上方的数据传输的同时实现易于耦合和宽调谐范围。仿真结果表明，可以实现12.3Gbps的数据速率。 -12.4DBM在7.4GHz带宽中的变化下实现了0.2dB的输出功率。振荡频率可以从224GHz调谐到单核VCO。一个核心的功耗为15.5mW。所提出的振荡器易于从栅极电感器磁性地耦合，以根据传输距离和损耗来产生更高的输出功率。两个耦合VCO被实施为概念证明，达到-10.5dBm的输出功率，带宽为8.25GHz。对于作者的知识，这是200GHz以上的第一个VCO，它使用电感器切换和BFSK。

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《Conference on Ph.D. Research in Microelectronics and Electronics》|2017年|387p|共4页
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Umut Celik; Wouter Steyaert; Patrick Reynaert;
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中图分类 TN4-53;
关键词
Inductors; Power generation; Voltage-controlled oscillators; Tuning; Couplings; Transistors;

机译：电感器;发电;电压控制振荡器;调谐;联轴器;晶体管;

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1. A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network [J] . Sooyeon Kim, Daekeun Yoon, Jae-Sung Rieh Terahertz Science and Technology, IEEE Transactions on . 2019,第5期

机译：具有耦合线匹配网络的270GHz CMOS三推环振荡器
2. A 340 GHz Triple-Push Oscillator With Differential Output in 40 nm CMOS [J] . Chun-Hsing Li, Chun-Lin Ko, Chien-Nan Kuo, Microwave and Wireless Components Letters, IEEE . 2014,第12期

机译：在40 nm CMOS中具有差分输出的340 GHz三重推挽振荡器
3. A −2.5-dBm, 5.1%-Tuning-Range, 417-GHz Signal Source With Gate-to-Drain-Coupled Oscillator in 65-nm CMOS Process [J] . Thanh Dat Nguyen, Jong-Phil Hong Microwave and Wireless Components Letters, IEEE . 2018,第11期

机译：在65nm CMOS工艺中具有-2.5dBm，5.1％调谐范围，417GHz信号源以及栅极到漏极耦合的振荡器
4. A 230.5–238.8-GHz magnetically coupled triple-push oscillator with inductive tuning for data transmission in 45-nm CMOS [C] . Umut Celik, Wouter Steyaert, Patrick Reynaert Conference on Ph.D. Research in Microelectronics and Electronics . 2017

机译：一个230.5–238.8-GHz磁耦合三重推振荡器，具有电感调谐功能，可以在45nm CMOS中传输数据
5. An inductively tuned silicon germanide BiCMOS quadrature VCO for clock and data recovery applications. [D] . Koo, Raymond C. 2004

机译：用于时钟和数据恢复应用的电感调谐锗硅BiCMOS正交VCO。
6. Comparative Analyses of Phase Noise in 28 nm CMOS LC Oscillator Circuit Topologies: Hartley Colpitts and Common-Source Cross-Coupled Differential Pair [O] . Ilias Chlis, Domenico Pepe, Domenico Zito -1

机译：28 nm CMOS LC振荡器电路拓扑中的相位噪声的比较分析：HartleyColpitts和共源交叉耦合差分对
7. An FSK Inductive-Coupling Transceiver Using 60mV 0.64fJ/bit 0.0016mm2 Load-Modulated Transmitter and LC-Oscillator-Based Receiver in 65nm CMOS for Energy-Budget-Unbalanced Application [O] . Kenya HAYASHI, Shigeki ARATA, Ge XU, 2019

机译：FSK电感耦合收发器使用60mV 0.64fj / bit 0.0016mm 2 负载调制的发射器和基于LC-振荡器的接收器，用于65nm CMOS的能量预算不平衡应用

A 230.5–238.8-GHz magnetically coupled triple-push oscillator with inductive tuning for data transmission in 45-nm CMOS

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