Presenting a synchronous — Asynchronous standard cell library based on 7nm FinFET technology

机译：展示基于7nm FinFET技术的同步—异步标准单元库

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The rise in demand on the electronic devices and smart solutions is a very important characteristic in today's daily routine. These complicated devices rose with the flourishing of CAD tools and automated digital designs. This paper presents a new standard cell library based on the 7nm BSIM-CMG FinFET technology. The library supports the design of synchronous and asynchronous circuits. Thanks to the new technology, great circuit specs are now reachable. A case study on a 4×16 decoder working at 10 GHz frequency is carried out to verify the feasibility of the proposed library. The study shows enhancement in power in comparison with GF 65nm & UMC 130nm by 66% & 87% respectively, also enhancement in area by three orders of magnitude when compared with GF 65nm & UMC 130nm.

机译：对电子设备和智能解决方案的需求增加是当今日常工作中的一个非常重要的特征。这些复杂的设备随着CAD工具和自动化数字设计的兴起而兴起。本文介绍了一种基于7nm BSIM-CMG FinFET技术的新标准单元库。该库支持同步和异步电路的设计。由于有了这项新技术，现在可以达到出色的电路规格。以工作在10 GHz频率的4×16解码器为例，验证了所提出的库的可行性。研究表明，与GF 65nm和UMC 130nm相比，功率分别提高了66％和87％，与GF 65nm和UMC 130nm相比，面积也增加了三个数量级。

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《International Conference on Microelectronics》|2016年|325-328|共4页
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Eslam Amr; Marina Maher; Amir Rashad; Mohamed Raafat; Yosif Diaa; Eslam Yahya; Yehea Ismail;
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Libraries; Standards; Logic gates; FinFETs; Asynchronous circuits; Decoding; Delays;

机译：库;标准;逻辑门; FinFET;异步电路;解码;延迟;

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专利

1. FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies [J] . Karapetyan Shushanik, Kleeberger Veit, Schlichtmann Ulf Microelectronics & Reliability . 2016,第JUNa期

机译：基于FinFET的产品性能：FinFET技术中标准单元的建模和评估
2. Performance Comparisons Between 7-nm FinFET and Conventional Bulk CMOS Standard Cell Libraries [J] . Xie Qing, Lin Xue, Wang Yanzhi, Circuits and Systems II: Express Briefs, IEEE Transactions on . 2015,第8期

机译：7nm FinFET与常规体CMOS标准单元库之间的性能比较
3. Comparison of Conventional 6T SRAM cell and FinFET based 6T SRAM Cell Parameters at 45nm Technology [J] . Deepali Verma, Shyam Babu, Shyam Akashe International Journal of Advanced Computer Research . 2015,第21期

机译：常规6T SRAM单元和基于FinFET的45nm技术的6T SRAM单元参数的比较
4. Presenting a synchronous — Asynchronous standard cell library based on 7nm FinFET technology [C] . Eslam Amr, Marina Maher, Amir Rashad, International Conference on Microelectronics . 2016

机译：呈现基于7nm FinFET技术的同步 - 异步标准单元库
5. Leakage Power Attack-resilient Designs of a SRAM Cell in 7NM FinFET Technology [D] . Chen, Kangqi. 2019

机译：采用7NM FinFET技术的SRAM单元的漏电攻击恢复设计
6. Biomechanical and physiological differences between synchronous and asynchronous low intensity handcycling during practice-based learning in able-bodied men [O] . Cassandra Kraaijenbrink, Riemer J. K. Vegter, Alexander H. R. Hensen, 2020

机译：健壮男性基于实践的学习过程中同步和异步低强度手循环之间的生物力学和生理差异
7. 5nm FinFET Standard Cell Library Optimization and Circuit Synthesis in Near-and Super-Threshold Voltage Regimes [O] . Qing Xie, Xue Lin, Yanzhi Wang, 2014

机译：5NM FinFET标准单元库近阈值和超级阈值电压调节的优化和电路合成

Presenting a synchronous — Asynchronous standard cell library based on 7nm FinFET technology

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