A mathematical model of the memristor is introduced. This model presents an explicit definition of memristance and flexible window functions for positive and negative excitation signs to accommodate the highly nonlinear and asymmetric switching behavior. The model addresses issues found with other models, and it improves fitting accuracy with physical data. It combines the exponential tunneling current functions and the dopant drift memristance definition to adopt the theory of their co-participation to the memristive behavior. Also, a PSPICE code for the model is provided, and it shows good convergence and robustness for different simulated memristive structures. A comparison with some experimental results is given, and the proposed model shows good matching to them.
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