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A Practical Sense Amplifier Design for Memristive Crossbar Circuits (PUF)

机译：存储器横杆电路（PUF）的实用读出放大器设计

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As CMOS process scaling is nearing to an end, emerging non-volatile devices such as memristors have been explored extensively in circuit design due to their very low footprint, non-volatility and low power application. Memristors, however, display a wide variety of characteristics depending on their inter-lying materials, as is the case for any emerging nano-devices. In this paper, we have designed a sense amplifier which is well-suited to applications of HfOx memristor based crossbar circuits. Specifically, we have successfully integrated this sense amplifier into our memristive crossbar physical unclonable function (PuF) as a part of our chip that we are fabricating. Our designed sense amplifier is able to operate reliably and reasonably fast at near-to-ground input and low supply voltage and with small voltage differences between the bit-lines. We have performed several Monte Carlo analysis to choose optimal design and device parameters and thus evaluated our proposed design for real hardware applications.
机译：随着CMOS工艺缩放接近结束，由于其非常低的占地面积，非易波动和低功率应用，已经在电路设计中广泛探讨了诸如存储器的新出现的非易失性器件。然而，存储器根据它们的间隙材料显示各种特性，就像任何新出现的纳米器件的情况一样。在本文中，我们设计了一种读出放大器，其非常适合于基于HFOX映射的横杆电路的应用。具体而言，我们已成功将该读出放大器集成到我们的Memristive Crossbar物理不可渗透功能（PUF）中作为我们正在制造的芯片的一部分。我们设计的读出放大器能够在接地输入和低电源电压下可靠且相当快地操作，并且位线之间的电压差异小。我们已经执行了几个Monte Carlo分析，以选择最佳的设计和设备参数，从而评估了我们的真实硬件应用程序的建议设计。

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