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PAT-Noxim: A Precise Power Thermal Cycle-Accurate NoC Simulator

机译：Pat-Noxim：精确的电源和热循环准确的NOC模拟器

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摘要

Ever increasing number of on-chip cores magnifies the need for efficient Network on Chip (NoC) architecture designs. To have a wide design space exploration, accurate simulators play a key role to estimate power consumption, area and temperature profile of NoCs. Access-Noxim as one of the well-known NoC simulators is used by several researchers to perform cycle-accurate simulations for different NoC architectures. However, this simulator lacks power and thermal accuracy due to ignoring the temperature/power cross impact which is also known as Temperature Effect Inversion. This paper presents PAT- Noxim, to address this source of inaccuracy in the Access- N oxim simulator. PAT-Noxim uses architecture-level tools to calculate power consumption and area more accurately with considering the power/temperature cross impact. PAT-Noxim simulator now supports several architectural alternatives including pipelined and non-pipelined routers, and arbitrary number of virtual channels per each port. In addition, the PAT-Noxim renders results for a wide ranges of VLSI fabrication technologies from 90 nm down to 22 nm. Obtained results by the PAT-Noxim simulator indicate 5.45% and 11.6% more accuracy in estimation of power consumption and temperature parameters respectively.
机译：越来越多的片上核心放大了对芯片（NOC）架构设计的有效网络的需求。为了拥有广泛的设计空间探索，准确的模拟器发挥着估算NOCS的功耗，区域和温度曲线的关键作用。 Access-Noxim作为众所周知的NoC模拟器，由几个研究人员使用，为不同的NoC架构执行循环准确的模拟。然而，由于忽略了温度/功率交叉冲击，该模拟器缺乏功率和热精度，这也称为温度效应反转。本文介绍了Pat-Noxim，以解决Access-n Oxim模拟器中的这种不准确源。 Pat-Noxim使用架构级工具，考虑到电源/温度交叉冲击，更准确地计算功耗和区域。 Pat-Noxim Simulator现在支持多种建筑替代品，包括流水线和非流水线路由器，每个端口的任意数量的虚拟通道。此外，PAT-Noxim呈现出从90nm至22nm的宽范围的VLSI制造技术。 PAT-Noxim模拟器的结果分别在估计功耗和温度参数中的准确性下降5.45％和11.6％。

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