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A study of surface electron states in topological insulators (Bi1−xInx)2Se3 with the use of terahertz laser radiation

机译:利用太赫兹激光辐射研究拓扑绝缘子(Bi1-xInx)2Se3中的表面电子态

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In this work, we show that the use of terahertz laser radiation combined with magnetic field provides an opportunity to detect high mobility surface electron states in (Bi1-xInx)2Se3 solid solutions being either in topological insulator (TI) (x 0.06) phase. It is demonstrated that in TI Bi2Se3 the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for TS (Bi0.88In0.12)2Se3 it only depends on the power of a laser pulse irrespective of its wavelength. The possible reasons for such a different behavior may be related to the enhanced thermalization time of the non-equilibrium carriers due to strong damping of electron-electron interaction in TI.
机译:在这项工作中,我们表明与磁场结合使用太赫兹激光辐射提供了一个机会,可以检测处于拓扑绝缘体(TI)(x 0.06)相的(Bi1-xInx)2Se3固溶体中的高迁移率表面电子态。结果表明,在TI Bi2Se3中,光电磁效应的振幅由入射辐射量子的数量定义,而对于TS(Bi0.88In0.12)2Se3,它仅取决于激光脉冲的功率,而与波长无关。这种行为不同的可能原因可能与TI中电子-电子相互作用的强烈衰减而导致非平衡载流子的热化时间延长有关。

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