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Development of a Payload Tile for the Characterization of FRAM Microcontrollers to Radiations

机译：开发用于表征FRAM微控制器辐射的有效载荷瓦片

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The space radiation environment can have serious effects on spacecraft electronics. The effect of incoming cosmic rays of galactic, solar origin and their interaction with the Earth's magnetic field limit system endurance and reliability. Transient effects from individual high-energy protons or heavy ions can in fact disrupt system operation irreversibly causing system faults that can be very dangerous. To test radiation effects on COTS Ferroelectric Random Access Memory (FRAM) microcontrollers, a payload tile for the AraMiS-C1 structure (modular architecture for small satellites, developed by Politecnico di Torino) called 1B521 Radiation Characterization Payload has been created. The satellite that includes this payload will be launched in a LEO (Low Earth Orbit) approximately between 600-800 km distance from the Earth. Spacecraft systems operating in this area must be hardened to withstand the radiation environment, and the electronics must be designed with several layers of redundancy. The damages produced by radiations are the cumulative effects of the dose received that can cause functional failures, and the effects of a single particle hit that mainly cause single event upset and single event latch-up. Finding single event sensitivity of the microcontroller is the main goal of the mission. FRAM cells store the information as a Lead Zirconate Titanate (PZT) film polarization and a charged particle hit has a very small possibility to cause a change in the polarization. The ferroelectric dielectric leads to a different behaviour of the cell compared with a DRAM one, producing many advantages especially for what concerns the overall power consumption in read/write cycles and the non-volatility properties of the device. The problems due to ionizing radiation are in our opinion concentrated in the CMOS logic surrounding the memory array. Our payload is hosted in a board included in a 1U Cubesat satellite. The board presents two identical microcontrollers MSP430FR6989 (Texas Instruments) that run the same program, but one uses software hardening techniques that should prevent malfunctions due to transient errors. We also monitor latch-up and when such an event is detected the system will power cycle the payload to prevent physical damage. The on-board computer of the satellite monitors the behaviour of the payload, logging any malfunctioning and creating an error report.
机译：空间辐射环境可能会对航天器电子设备造成严重影响。银河，太阳起源的宇宙射线的入射以及它们与地球磁场的相互作用限制了系统的耐久性和可靠性。实际上，来自各个高能质子或重离子的瞬态效应实际上会不可逆转地破坏系统运行，从而导致系统故障，这非常危险。为了测试辐射对COTS铁电随机存取存储器（FRAM）微控制器的影响，已创建了称为1B521辐射表征有效载荷的AraMiS-C1结构（小型卫星的模块化体系结构，由Politecnico di Torino开发）的有效载荷图块。包括该有效载荷的卫星将在距地球约600-800公里的LEO（低地球轨道）中发射。在该区域运行的航天器系统必须经过加固以承受辐射环境，并且电子设备必须设计成具有多层冗余。辐射产生的损害是所接收剂量的累积作用，可能导致功能故障，以及单个粒子撞击的影响，这些作用主要导致单事件不安定和单事件闭锁。找到微控制器的单事件敏感性是任务的主要目标。 FRAM单元将信息存储为锆钛酸铅（PZT）薄膜极化，带电粒子撞击极少会引起极化变化。与DRAM相比，铁电介质导致单元的行为有所不同，尤其在涉及读/写周期中的总功耗以及设备的非挥发性特性方面，产生了许多优势。在我们看来，由电离辐射引起的问题集中在存储器阵列周围的CMOS逻辑中。我们的有效载荷托管在1U Cubesat卫星中包含的板上。该开发板提供了两个相同的微控制器MSP430FR6989（Texas Instruments），它们运行相同的程序，但其中一个使用软件强化技术，可以防止由于瞬态错误而引起的故障。我们还监视闩锁，并且当检测到此类事件时，系统将对有效负载重新通电以防止物理损坏。卫星的车载计算机监视有效载荷的行为，记录所有故障并创建错误报告。

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