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Analysis, modeling and implementation of a new 1.8V fierce-gate crystal oscillator based on the constant cell in 28nm CMOS technology for automotive radar applications

机译:基于28nm CMOS技术中恒定单元的新型1.8V凶门晶体振荡器的分析,建模和实现,用于汽车雷达应用

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The majority of analog and digital integrated circuits with built in crystal oscillator use the Gated Pierce design where the oscillator is built around a single CMOS inverting gate. In most applications that require a high level of precision and stability of the performances versus Process, Voltage and Temperature (PVT) variations, this design is not suitable. The inverter cell itself is very sensitive to PVT variations, negatively affecting the overall performances of a crystal oscillator. This paper shows a new Pierce-Gate crystal oscillator based on the constant g cell, implemented in 28nm CMOS TSMC technology. The oscillator can work with any crystal frequency between 20 MHz and 100 MHz, the power supply is 1.8V and the output is a 50% duty cycle square waveform. Simulations and measurements show that the new designed crystal oscillator is superior in terms of phase noise performances (-123 dBc/Hz at 100 Hz offset at 60 MHz and -163 dBc/Hz at 1MHz offset at 60 MHz), phase noise variation over PVT, Power Supply Rejection Ratio (PSRR), output frequency and output duty cycle stability, and input impedance with respect to the state of the art counterparts. The implemented crystal oscillator is very challenging and suitable for automotive radar applications.
机译:大多数内置晶体振荡器的模拟和数字集成电路都采用门控皮尔斯设计,该振荡器围绕一个CMOS反相门构建。在大多数要求对性能,过程温度,电压和温度(PVT)变化有较高精确度和稳定性的应用中,此设计不适合。反相器单元本身对PVT变化非常敏感,会对晶体振荡器的整体性能产生负面影响。本文展示了一种基于恒定g单元的新型Pierce-Gate晶体振荡器,该振荡器以28nm CMOS TSMC技术实现。该振荡器可以在20 MHz至100 MHz之间的任何晶振频率下工作,电源为1.8V,输出为占空比为50%的方波。仿真和测量结果表明,新设计的晶体振荡器在相位噪声性能(60 MHz时100 Hz偏移时为-123 dBc / Hz和60 MHz时1MHz偏移时为-163 dBc / Hz)方面具有优越的性能,电源抑制比(PSRR),输出频率和输出占空比稳定性以及相对于现有技术水平的输入阻抗。实现的晶体振荡器非常具有挑战性,并且适合于汽车雷达应用。

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