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Optimization of N+ hetero pocket doped Dual metal Vertical TFET

机译：N + Hetero袋掺杂双金属垂直TFET的优化

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In this paper, an N+ hetero pocket doped Dual metal Vertical TFET is proposed. Due to an additional tunneling contribution to current along the body thickness of the device the proposed device offers larger ON current and steeper subthreshold slope (SS) as compare to conventional Tunnel FET. Here, the n+ pocket doping is incorporated near the gate source overlap region. Moreover, the pocket material is optimized with different bandgap materials. The dual metal gate (DMG) is used and compared with single material gate (SMG). Further, with an n~+ layer at the p-source side, improvements in the device performance in terms of on-current (10~(-3)A), subthreshold swing, SS (39mV/dec) are achieved. The proposed device is optimized for channel length, silicon body layer thickness, source doping engineering, gate dielectric material. Finally, the analog performance of the device is examined and found the device is suitable for high frequency application.
机译：在本文中，提出了一种N +杂袋掺杂双金属垂直TFET。由于沿着设备的主体厚度对电流的额外隧道贡献，所提出的装置在电流和陡峭的亚阈值斜坡（SS）上提供更大的倾斜（SS），与传统的隧道FET相比。这里，N +口袋掺杂结合在栅极源重叠区域附近。此外，袋材料用不同的带隙材料进行了优化。使用双金属栅极（DMG）并与单材料栅极（SMG）进行比较。此外，在P源侧的N〜+层，实现了在电流上（10〜（-3）A），亚阈值摆动，SS（39mV / DEC）的装置性能的改进。所提出的装置针对沟道长度，硅主体层厚度，源掺杂工程，栅极介电材料进行了优化。最后，检查设备的模拟性能，并发现该设备适用于高频应用。

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