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首页> 外文会议>International Microsystems, Packaging, Assembly and Circuits Technology Conference >Investigation of Non-Pressure Sinter Silver in Power Module with High Accelerated Stress Aging Test
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Investigation of Non-Pressure Sinter Silver in Power Module with High Accelerated Stress Aging Test

机译：高加速老化试验研究功率模块中的无压烧结银

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Traditional lead-free solder are widely employed for die attachment owing to low cost and easy process. The melting points of lead-free solder are under the tolerable levels for silicon semiconductor devices. However, wide band gap semiconductors such as Gallium nitride (GaN) and Silicon carbide (SiC) with excellent electrical characteristics can be utilized for power electronics application at high power and high junction temperatures beyond 300°C [1], [2]. Therefore, suitable die-attachment materials which could bear the high junction temperatures play an important role for these wide band gap devices. However, the traditional techniques to interconnect (such as the solder alloys) are inappropriate due to the limits of operating temperatures and lower thermal conductivity. Silver sinter joining is well known for die-bond material because of outstanding heat conductivity as well as excellent high temperature stability [3], [4], [5]. In the study, a high thermal conductivity was obtained from the micro-sized silver particles sintered at 280°C for 90 min without pressure [6]. Besides, shear strength of bulk silver joint on bare copper substrate larger than 35 MPa were successfully achieved, which was produced a lower porosity less than 8.5%.In order to investigate the stability of pressure-less sintered silver joints after high aging tests, we have carried out high temperature storage (HTS) at 175°C for 2000 hours. The power device characters with sinter material including the die shear strength (DSS), ratio of porosity, I-V curve, surge current ability and thermal conductivity were verified in comparison to the initial state. In this study, mechanical shear over 28 MPa has been remained after aging at 175°C for 2000 hours. Furthermore, we have proven the electrical and thermal stability of non-press sintered silver when environmental tests of high temperature storage. Cross-section microstructure of the interface between sintered silver and copper substrate was examined by Scanning Electron Microscopy (SEM). The SEM images show that the formation of metallic bonds between the sintered joints and bare copper. Then, the sintered density of the joints were higher after high-heat reliability test because of the micro-silver particles composed complex porous networks as well as thick connection. In addition, it is carried out high thermal storage at 250°C for 500 hours, as well as the surge current ability still kept stable after the aging heating tests. To sum up, there is no doubt that the novel sintered silver paste without applied pressure has been one of the most promising candidates for high temperature and high power electronic applications in the future.
机译：传统的无铅焊料由于成本低和易于加工而被广泛用于管芯连接。无铅焊料的熔点低于硅半导体器件的容许水平。然而，具有出色电特性的宽带隙半导体，例如氮化镓（GaN）和碳化硅（SiC），可用于功率电子应用，在高功率和超过300°C的高结温下[1]，[2]。因此，可以承受高结温的合适的芯片连接材料对于这些宽带隙器件起着重要的作用。但是，由于工作温度的限制和较低的热导率，传统的互连技术（例如焊料合金）是不合适的。银烧结连接因其出色的导热性和出色的高温稳定性而在芯片连接材料中广为人知[3]，[4]，[5]。在这项研究中，通过在280°C下无压力烧结90分钟的微小银颗粒获得了高导热率[6]。此外，成功地实现了裸银基体上散装银接头的剪切强度大于35 MPa，产生的孔隙率低于8.5％。为了研究高时效试验后无压烧结银接头的稳定性，我们已在175°C下进行了2000小时的高温存储（HTS）。与初始状态相比，验证了具有烧结材料的功率器件的特性，包括模切强度（DSS），孔隙率，IV曲线，浪涌电流能力和热导率。在这项研究中，在175°C老化2000小时后，仍保留了超过28 MPa的机械剪切力。此外，我们已经在高温存储环境测试中证明了非压制烧结银的电气和热稳定性。通过扫描电子显微镜（SEM）检查了烧结的银和铜衬底之间的界面的横截面显微结构。 SEM图像表明，在烧结接头和裸铜之间形成了金属键。然后，由于微银颗粒组成复杂的多孔网络以及较厚的连接，因此在高热可靠性测试后，接头的烧结密度更高。此外，它在250°C的高温下可保存500小时，并且在老化加热测试后，浪涌电流能力仍保持稳定。综上所述，毫无疑问，没有施加压力的新型烧结银浆已成为未来高温和高功率电子应用中最有前途的候选之一。

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