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首页> 外文会议>International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology >Different Effect of Temperature Increment on CoFeB/MgO Based Single and Double Barrier Magnetic Tunnel Junctions during Switching Process in STT-MRAM
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Different Effect of Temperature Increment on CoFeB/MgO Based Single and Double Barrier Magnetic Tunnel Junctions during Switching Process in STT-MRAM

机译：STT-MRAM切换过程中温度升高对基于CoFeB / MgO的单和双势垒磁性隧道结的不同影响

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摘要

Recently, double barrier magnetic tunnel junction (DBMTJ) can be applied for spin transfer torque magnetic random access memory (STT-MARM) technology. DBMTJ provides a higher thermal stability factor and a lower critical current when comparing with the single barrier magnetic tunnel junction (SBMTJ). However, the double MgO layers in structure can affect the high temperature during switch process. Therefore, this work explored the different effect of temperature increment on both SBMTJ and DBMTJ during the switching current flow. Structures for study consist of the SBMTJ with MgO thickness of 0.9 nm, the DBMTJ with MgO thickness of 0.9 nm (DBMTJ(A)) and the DBMTJ with MgO thickness of 1.3 nm (DBMTJ(B)). Simulation can be achieved by 3D finite element method. The results show that although the DBMTJ(B) has the minimum critical current when comparing with DBMTJ(A) and SBMTJ, the maximum temperature increment is found with DBMTJ(B) at the same switching current in the switching process. Hence, the thermal reliability of DBMTJ device applied for in-plane MTJ in STT-MRAM is interesting for improvement of the memory technology.
机译：最近，双势垒磁性隧道结（DBMTJ）可以用于自旋转移矩磁随机存取存储器（STT-MARM）技术。与单势垒磁性隧道结（SBMTJ）相比，DBMTJ具有更高的热稳定性因子和更低的临界电流。但是，结构中的双MgO层会影响开关过程中的高温。因此，这项工作探索了在开关电流流动期间温度升高对SBMTJ和DBMTJ的不同影响。研究结构包括MgO厚度为0.9 nm的SBMTJ，MgO厚度为0.9 nm的DBMTJ（DBMTJ（A））和MgO厚度为1.3 nm的DBMTJ（DBMTJ（B））。可以通过3D有限元方法来实现仿真。结果表明，尽管与DBMTJ（A）和SBMTJ相比，DBMTJ（B）的临界电流最小，但在相同的开关电流下，在开关过程中，DBMTJ（B）的最大温升却最大。因此，在STT-MRAM中应用于面内MTJ的DBMTJ器件的热可靠性对于改进存储技术是令人感兴趣的。

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