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An E-Band Variable Gain Low Noise Amplifier in 90-Nm CMOS Process Using Body-Floating and Noise Reduction Techniques

机译：采用体浮和降噪技术的90 Nm CMOS工艺中的电子波段可变增益低噪声放大器

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A variable gain low noise amplifier (VGLNA) for millimeter-wave (MMW) wireless communication is proposed in this paper. This VGLNA is implemented using 90-nm CMOS process. It shows small signal gain greater than 20.9 dB from 68.9 to 87.6 GHz with 2.5-dB variation and a dc consumption 56 mW. The gain control range is 2.3 to 21.1 dB at center frequency. The measured minimum noise figure (NF) is 5.3 dB at 80 GHz. This work shows the best noise performance of LNAs in 90-nm CMOS at similar frequencies and comparable figure of merit to those MMW LNAs in better IC process.

机译：本文提出了一种用于毫米波（MMW）无线通信的可变增益低噪声放大器（VGLNA）。该VGLNA使用90纳米CMOS工艺实现。它显示了从68.9至87.6 GHz的大于20.9 dB的小信号增益，变化为2.5 dB，直流功耗为56 mW。中心频率处的增益控制范围为2.3至21.1 dB。在80 GHz时，测得的最小噪声系数（NF）为5.3 dB。这项工作显示了在相似的频率下，在90nm CMOS中LNA的最佳噪声性能，并且在更好的IC工艺中与那些MMW LNA具有可比的品质因数。

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《European Microwave Conference》|2018年|1245-1248|共4页
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Yunshan Wang; Chun-Nien Chen; Yi-Ching Wu; Huei Wang;
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Gain; Noise figure; Gain control; Low-noise amplifiers; Frequency control; Noise reduction;

机译：增益;噪声系数;增益控制;低噪声放大器;频率控制;降噪;

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专利

1. An inductorless wideband noise-cancelling CMOS low noise amplifier with variable-gain technique for DTV tuner application [J] . Hwang Y.-S., Wang S.-F., Yan S.-C., AEU: Archiv fur Elektronik und Ubertragungstechnik: Electronic and Communication . 2010,第11期

机译：具有可变增益技术的无电感器宽带降噪CMOS低噪声放大器，用于DTV调谐器应用
2. A UWB CMOS low-noise amplifier with noise reduction and linearity improvement techniques [J] . Babak Mazhab Jafari, Mohammad Yavari Microelectronics journal . 2015,第2期

机译：具有降噪和线性改善技术的UWB CMOS低噪声放大器
3. A K/Ka/V Triband Single-Signal-Path Receiver With Variable-Gain Low-Noise Amplifier and Constant-Gain Phase Shifter in 28-nm CMOS [J] . Liang Chia-Jen, Zhang Yan, Chiang Ching-Wen, IEEE Transactions on Microwave Theory and Techniques . 2021,第5期

机译：具有可变增益低噪声放大器的K / KA / V TRIB和单信号路径接收器和28 nm CMOS中的恒定增益相移器
4. An E-Band Variable Gain Low Noise Amplifier in 90-nm CMOS Process Using Body-Floating and Noise Reduction Techniques [C] . Yunshan Wang, Chun-Nien Chen, Yi-Ching Wu, European Microwave Conference . 2018

机译：电流和降噪技术的90-NM CMOS工艺中的电气带可变增益低噪声放大器
5. Some design techniques for low power low noise CMOS amplifier with noise optimization for wireless application in GHz frequencies. [D] . Khan, M. Zamin. 2006

机译：低功耗低噪声CMOS放大器的一些设计技术，具有针对GHz频率无线应用的噪声优化。
6. Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors [O] . Shoji Kawahito, Min-Woong Seo 2014

机译：用于超低噪声CMOS图像传感器的基于多采样的信号读取电路的降噪效果
7. A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP [O] . Tsai Ming-Da, Liu Ren-Chieh, Lin Chin-Shen, 2003

机译：低压全集成4.5-6GHz CMOS可变增益低噪声放大器InGaP

An E-Band Variable Gain Low Noise Amplifier in 90-Nm CMOS Process Using Body-Floating and Noise Reduction Techniques

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