1-xIn Study of the GaInAsN/GaAs Structure for Improve the Efficiency of Solar Cell
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Study of the GaInAsN/GaAs Structure for Improve the Efficiency of Solar Cell

机译:GaInAsN / GaAs结构用于提高太阳能电池效率的研究

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The objective of this work is based on the modeling and simulation of the Ga1-xInxAs1-yNy/GaAs structure, for solar cell applications. Theoretical model was used to study the effects of the indium (In) incorporation and nitrogen (N) concentration in the GaInAsN material. In order to implement this idea, a simulation program was developed to determine the strain effect on the band energy by taking into consideration the influence of In < 25% and N < 4%. In this study we have used the Band Anti-Crossing (BAC) model. Indeed, the strain reduces the band gap energy, and the nitrogen incorporation splits the conduction band into two subbands E+ and E-. In the correct condition, we also treated the impact of indium and nitrogen concentrations on the absorption coefficient of the GaInAsN/GaAs structure. According to a particular sequence, the raise of these both materials concentrations In and N results in the increase of the absorption coefficient. This work allowed us to optimize the In and N concentrations to raise the efficiency η= 22%, with strain equal to 1.5% of the solar cell based on the GaInAsN/GaAs structure.
机译:这项工作的目标是基于Ga的建模和仿真 1-x x 作为 1-y ñ y / GaAs结构,用于太阳能电池应用。理论模型用于研究GaInAsN材料中铟(In)的掺入和氮(N)浓度的影响。为了实现这个想法,开发了一个模拟程序,通过考虑In <25%和N <4%的影响来确定应变对能带的影响。在这项研究中,我们使用了带抗交叉(BAC)模型。实际上,应变减小了带隙能量,并且氮的掺入将导带分成两个子带E +和E-。在正确的条件下,我们还处理了铟和氮浓度对GaInAsN / GaAs结构吸收系数的影响。根据特定的顺序,这两种物质的浓度In和N的升高都会导致吸收系数的增加。这项工作使我们能够优化In和N的浓度,以提高效率η= 22%,应变等于基于GaInAsN / GaAs结构的太阳能电池的1.5%。

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