A Full Monolithic 26GHz LNA with Special Transmission Line and Transformer for 5G Applications in 55nm and 65nm CMOS

机译：适用于55nm和65nm CMOS的5G应用的具有特殊传输线和变压器的完整单芯片26GHz LNA

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This paper presents a three stages single-ended common-source low noise amplifier (LNA) for 5G high-band (24.75GHz-27.5GHz) applications. Combing package parasitics such as bond-wires and bond-pads, special transmission lines and transformers are applied in layout to make layout design flexible and reduce the length of interconnection. This design flow has been proved successfully in two different process platform, 55nm and 65nm CMOS process technologies. The LNA achieves voltage gain above 17dB and over -8.75dBm IIP3 at 26GHz in two process technologies with 3.8dB and 3.65dB noise figure respectively.

机译：本文介绍了适用于5G高频段（24.75GHz-27.5GHz）应用的三级单端共源低噪声放大器（LNA）。在布局中结合了诸如键合线和键合焊盘之类的封装寄生特性，特殊的传输线和变压器，从而使布局设计更加灵活并缩短了互连长度。该设计流程已经在55nm和65nm CMOS工艺技术这两种不同的处理平台上得到了成功证明。在两种工艺技术中，LNA分别在3.8dB和3.65dB的噪声系数下，在26GHz时可实现高于17dB的电压增益和超过-8.75dBm的IIP3增益。

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《International Conference on Electronics Technology》|2020年|257-261|共5页
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Li Rao; Haigang Feng; Ning Zhang;
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LNA; 55nm CMOS; 65nm CMOS; 5G high-band; gain; NF; matching; wideband; parasitics; transmission line; inductor; transformer; layout;

机译：LNA; 55nm CMOS; 65nm CMOS; 5G高频段;增益; NF;匹配;宽带;寄生;传输线;电感;变压器;布局;

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专利

1. Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-band CMOS LNAs [J] . Cheon Soo Kim, Min Park, Chung-Hwan Kim, ETRI journal . 1999,第4期

机译：高电阻率基底上的厚金属CMOS技术及其在单片L带CMOS LNA中的应用
2. A Fully Monolithic BiCMOS Envelope-Tracking Power Amplifier With On-Chip Transformer for Broadband Wireless Applications [J] . Li Y. Microwave and Wireless Components Letters, IEEE . 2012,第6期

机译：具有片上变压器的全单片BiCMOS包络跟踪功率放大器，用于宽带无线应用
3. ULTRA LOW VOLTAGE AND POWER DESIGN OF A 0.18um CMOS LNA FOR 4-5GHZ APPLICATIONS [J] . WEN WANG, CHUNHUA WANG, JIANQUN DING Electronics world . 2015,第1948期

机译：适用于4-5GHZ应用的0.18um CMOS LNA的超低压和功率设计
4. A Low Voltage, Low Power RF CMOS LNA for Bluetooth Applications using Transmission Line Transformers [C] . Bill Toole, Calvin Plett 27th European Solid-State Circuits Conference, Sep 18-20, 2001, Villach, Austria . 2001

机译：使用传输线变压器的蓝牙应用低电压，低功耗RF CMOS LNA
5. A Broadband Millimeter Wave LNA in 65nm CMOS Technology with Minimized Gain and Noise Variations [D] . Dadnam, Fariborz 2013

机译：采用65nm CMOS技术的宽带毫米波LNA，具有最小的增益和噪声变化
6. Microhotplates for Metal Oxide Semiconductor Gas Sensor Applications—Towards the CMOS-MEMS Monolithic Approach [O] . Haotian Liu, Li Zhang, King Ho Holden Li, 2018

机译：用于金属氧化物半导体气体传感器的微孔板—迈向CMOS-MEMS单片方法
7. A 3.75Gbps Configurable Continuous Time Linear Equalizer and 3-tap Decision Feedback Equalizer in 65nm CMOS [O] . Yong Fu, Zhiping Wen, Lei Chen, 2016

机译：3.75Gbps可配置连续时间线性均衡器和3分判决反馈均衡器在65nm CMOS中

A Full Monolithic 26GHz LNA with Special Transmission Line and Transformer for 5G Applications in 55nm and 65nm CMOS

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