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Analytical study of double gate MOSFET: A design and performance perspective

机译：双闸MOSFET的分析研究：设计与性能视角

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摘要

This paper presents an in depth study and analysis which shows that the Double gate MOSFET has emerged as one of the most favorable devices due to short channel effect immunity, off-current reduction ability and more scaling possibility. The devices with less than 0.1 μm gate length can maintain near ideal subthreshold factor. This paper also presents some new modifications in the existing devices, in order to keep up with the performance improvements, such as Asymmetric Undoped Double gate MOSFET, Symmetric and Asymmetric Underlap Double gate MOSFET, high K TMDG MOSFET, high K Spacer Asymmetric Underlap Double gate MOSFET, Graded Channel Double gate MOSFET and Dual-insulator Double gate MOSFET.
机译：本文提出了深入的研究和分析，表明双栅极MOSFET由于短的通道效应抗扰度，电流降低能力和更多缩放可能性而被出现为最有利的设备之一。具有小于0.1μm的栅极长度的装置可以保持在理想的亚阈值因子附近。本文还提出了现有设备中的一些新修改，以便跟上性能改进，如不对称未掺杂的双栅MOSFET，对称和不对称的双栅极MOSFET，高K TMDG MOSFET，高k间隔不对称下划线双门MOSFET，分级频道双栅MOSFET和双绝缘子双栅MOSFET。

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