Photo-assisted Processing of Amorphous Gallium Oxide (a-GaOx) Thin Film for Flexible and Transparent Device Application

机译：用于柔性和透明器件应用的非晶氧化镓（a-GaOx）薄膜的光辅助处理

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We report the photo-assisted processing of solution-processed ultra wide bandgap oxide (Eg ≥4.8 eV), amorphous gallium oxide (a-GaOx), to enhance its conductivity. The 12-nm-thick a-GaOx), film was subjected to UV treatment at 115°C for 60 min. The results show that UV treatment induced a minimal change in the electrical properties unlike what is observed in other wide band gap (Eg ~ 3 eV) oxide materials, such as a-InZnO and a-InGaZnO.

机译：我们报告了溶液处理的超宽带隙氧化物（E g ≥4.8eV），无定形氧化镓（a-GaO x ），以增强其导电性。 12纳米厚的a-GaO x ），将薄膜在115°C进行60分钟的UV处理。结果表明，与其他宽带隙（E g 〜3 eV）氧化物材料，例如a-InZnO和a-InGaZnO。

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《International Workshop on Active-Matrix Flatpanel Displays and Devices》|2020年|131-132|共2页
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Diki Pumawati; Juan Paolo Bermundo; Yasuaki Ishikawa; Yukiharu Uraoka;
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1. Mechanical properties of amorphous indium-gallium-zinc oxide thin films on compliant substrates for flexible optoelectronic devices [J] . Mohammed D. W., Waddingham R., Flewitt A. J., Thin Solid Films . 2015,第NOVa2PTaA期

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2. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors [J] . Mativenga M.Choi M. H.Choi J. W.Jang J. Electron Device Letters, IEEE . 2011,第2期

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6. Electrical Structural Optical and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications [O] . Seung-Hun Lee, Kihwan Kwon, Kwanoh Kim, 2019

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7. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices [O] . Mohammed, DW, Waddingham, R, Flewitt, Andrew John, 2015

机译：柔性光电器件顺应性基板上非晶铟-镓-氧化锌薄膜的机械性能

Photo-assisted Processing of Amorphous Gallium Oxide (a-GaOx) Thin Film for Flexible and Transparent Device Application

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