SiC vs.Si: Two-Dimensional of Quasi-Saturation Behavior of D.MOS Devices Opcrat ng at Elevated Temperatures

机译：SiC与Si：高温下D.MOS器件的准饱和行为二维

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper reports a 2D analysis of the quasi-saturation behaviorof 6H-SiC DMOS devices considering surface trapping effect. Based on the study, in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping effect. In the quasi-saturation region, the drain current is mainly influenced by the electron mobility in the substrate region.

机译：本文报告了6H-SiC DMOS器件考虑表面俘获效应的准饱和行为的二维分析。根据这项研究，在准准饱和区域，漏极电流主要由表面俘获效应决定。在准饱和区域中，漏极电流主要受衬底区域中电子迁移率的影响。

著录项

来源
《International conference on solid-state and integrated circuit technology》|1995年|298-300|共3页
会议地点
作者
Y. W. Chang; J. B. Kuo;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Comparison of cyclic fatigue behavior between C/SiC and SiC/SiC ceramic-matrix composites at elevated temperatures using hysteresis dissipated energy [J] . Li Longbiao Composite Structures . 2016,第auga期

机译：使用磁滞耗散能量比较高温下C / SiC和SiC / SiC陶瓷基复合材料的循环疲劳行为
2. Fatigue and stress-rupture behaviors of SIC/SiC composite under humid environment at elevated temperature [J] . Shankar Mall, K.J. LaRochelle Composites Science and Technology . 2006,第15期

机译：SIC / SiC复合材料在高温潮湿环境下的疲劳和应力断裂行为
3. Effects of cyclic tensile loading on the rupture behavior of orthogonal 3-D woven SiC fiber/SiC matrix composites at elevated temperatures in air [J] . Ikarashi Yoshito, Ogasawara Toshio, Aoki Takuya Journal of the European Ceramic Society . 2019,第4期

机译：环状拉伸载荷对空气升高温度下正交3-D编织SiC纤维/ SiC基复合材料的影响
4. SiC vs. Si: Two-Dimensional Analysis of Quasi-Saturation Behavior of DMOS Devices Operating at Elevated Temperatures [C] . Y. W. Chang, J. B. Kuo International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN) . 1995

机译：SiC与Si：在高温下运行的DMOS器件的准饱和行为的二维分析
5. Modeling and simulation of high-field, high-temperature SiC devices. [D] . Pathak, Sanjay. 1999

机译：高场高温SiC器件的建模和仿真。
6. Comparisons of Damage Evolution between 2D C/SiC and SiC/SiC Ceramic-Matrix Composites under Tension-Tension Cyclic Fatigue Loading at Room and Elevated Temperatures [O] . Longbiao Li 2016

机译：室温和高温下拉伸张力循环疲劳载荷下2 C / SiC和SiC / SiC陶瓷基复合材料损伤演化的比较
7. Foreign Object Damage Behavior of a SiC/SiC Composite at Ambient and Elevated Temperatures [O] . Gyekenyesi John P., Choi Sung R., Pereira J. Michael, 2004

机译：SiC / SiC复合材料在常温和高温下的异物损伤行为
8. Creep/Stress Rupture Behavior and Failure Mechanisms of Full CVI and Full PIP SiC/SiC Composites at Elevated Temperatures in Air. [R] . Bhatt, R. T., Kiser, J. D. 2017

机译：空气中高温下全CVI和全pIp siC / siC复合材料的蠕变/应力断裂行为及失效机理。

SiC vs.Si: Two-Dimensional of Quasi-Saturation Behavior of D.MOS Devices Opcrat ng at Elevated Temperatures

摘要

著录项

相似文献

相关主题

期刊订阅