Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals

机译：γ诱导的充电效应：Ce3 +和Nd3 +掺杂的YAG晶体中的Ce4 +-Ce3 +

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Abstract: Gamma-induced transition of Ce$+4$PLU$/ $ARLR Ce$+3$PLU$/ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce$+3$PLU$/ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce$+3$PLU$/ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce$+3$PLU$/ starting concentration. !10

机译：摘要：研究了Ce，Nd：YAG样品从同一晶体切下且彼此相差十分之一的情况，研究了伽马射线诱导的Ce $ + 4 $ PLU $ / $ ARLR Ce $ + 3 $ PLU $ /的跃迁。 Ce + 3 $ PLU $ /离子浓度（起始浓度）。根据起始浓度，观察到Ce $ + 3 $ PLU $ /离子的浓度变化。 Ce，Nd：YAG晶体在约530 nm处的发光随Ce $ + 3 $ PLU $ /起始浓度的增加而独立增加。！10

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《Solid State Crystals: Growth and Characterization》|1997年|p.279-282|共4页
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Slawomir Kaczmarek; Military Univ. of Technology; Warsaw; Poland; Miroslaw Kwasny; Military Univ. of Technology; Warsaw; Poland; Jaroslaw Kisielewski; Institute of Electronic Materials Technology; Warszawa; Poland; Z.Moroz; Institute of Nuclear Problems; Swierk; Poland; Andrej O. Matkovskii; SRC Carat; Lviv; Ukraine; Dmitry Y. Sugak; SRC Carat; Lviv; Ukraine.;
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中图分类晶体学;
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Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals

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