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首页> 外文会议>Conference on ultrafast phenomena in semiconductors >Phonons electron-phonon interactions and phonon-phonon interactions in III-V nitrides
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Phonons electron-phonon interactions and phonon-phonon interactions in III-V nitrides

机译：III-V族氮化物中的声子电子-声子相互作用和声子-声子相互作用

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Abstract: Fundamental properties of phonons in III-V nitrides are examined with a view toward understanding processes important in the operation of III-V nitride devices. Firstly, confined, interface and propagating modes in wurtzite quantum wells are described in terms of Loudon's model for uniaxial semiconductors and the dielectric continuum model. Basic properties of the phonon modes and carrier-phonon interactions are considered in the basis of this treatment of dimensionally-confined phonons in wurtzite structures. A key feature of these phonon modes is their enhanced dispersion and its origin from the non-isotropic nature of the wurtzites. As will be discussed, this dispersion has important consequences for phonon propagation and phonon energy spectra. Secondly, the second-order phonon decay process of combined point defect scattering and anharmonic decay is examined as a means of estimating line broadening associated with the decay of phonons in III-V nitrides of wurtzite structure containing point defects. Thirdly, an analysis of Raman linewidths measured for AlN and GaN wurtzites is made to estimate phonon lifetimes.!49
机译：摘要：为了了解III-V氮化物器件操作中的重要过程，对III-V氮化物中的声子的基本特性进行了研究。首先，根据单轴半导体的Loudon模型和介电连续体模型，描述了纤锌矿量子阱中的约束，界面和传播模式。在处理纤锌矿结构中尺寸受限的声子的基础上，考虑了声子模的基本性质和载子-声子相互作用。这些声子模式的关键特征是增强的色散，其起源于纤锌矿的非各向同性性质。如将要讨论的，该色散对声子传播和声子能谱具有重要的影响。其次，研究了结合点缺陷散射和非调和衰变的二阶声子衰变过程，作为估计与含点缺陷的纤锌矿结构的III-V族氮化物中的声子衰变有关的谱线展宽的一种方法。第三，对AlN和GaN纤锌矿测得的拉曼线宽进行分析，以估计声子寿命！49

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