首页> 外文会议>Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on >Key properties in PbSrSe thin films and PbSe/PbSrSe quantum wells for mid-infrared optoelectronic applications
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Key properties in PbSrSe thin films and PbSe/PbSrSe quantum wells for mid-infrared optoelectronic applications

机译:用于中红外光电应用的PbSrSe薄膜和PbSe / PbSrSe量子阱的关键特性

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We review our recent investigations on PbSrSe thin film and PbSe/PbSrSe quantum well structures grown by MBE techniques for MIR optoelectronic applications. The band structures, effective mass, phonon behaviour, refractive indices etc, have been investigated by IR absorption and PL spectroscopies under different compositions, temperatures and structures, and combined with some model calculations.
机译:我们回顾了我们最近对通过MBE技术生长的用于MIR光电应用的PbSrSe薄膜和PbSe / PbSrSe量子阱结构的研究。通过红外吸收和PL光谱研究了在不同成分,温度和结构下的能带结构,有效质量,声子性能,折射率等,并结合了一些模型计算。

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