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首页> 外文会议>Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the >A new gate circuit performing fault protections of IGBTs during short circuit transients
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A new gate circuit performing fault protections of IGBTs during short circuit transients

机译：一种新的门电路在短路瞬变期间执行IGBT故障保护

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Short circuit faults of IGBTs determine overcurrent through the devices subsequently to a turn-on switching or during the on-state condition, leading respectively to hard switching fault (HSF) or fault under load (FUL). Firstly, the state of the art as appearing in literature is recalled and discussed. A new short-circuit protection scheme, which allows protection of IGBT devices against fault under load and hard switching fault transients, is presented. It performs the fault current limiting action within the short circuit time, and subsequently forces the device to gate on again in a tentative turn-on. Moreover, the proposed circuitry allows strong bounding of the peak of the current in FUL transients. The validity and correctness of the proposed approach has been extensively validated by experimental tests.
机译：IGBT的短路故障决定了导通开关之后或导通状态期间流经器件的过电流，分别导致硬开关故障（HSF）或负载下故障（FUL）。首先，回顾并讨论文学中出现的最新技术。提出了一种新的短路保护方案，该方案可以保护IGBT器件免受负载下的故障和硬开关故障瞬变的影响。它在短路时间内执行故障电流限制动作，随后强制设备在尝试性导通的情况下再次导通。而且，所提出的电路允许在FUL瞬变中对电流的峰值进行有力限制。所提出的方法的有效性和正确性已通过实验测试得到了广泛验证。

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