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Thickness dependence of transport properties of epitaxial SrRuO_3 thin films grown on SrTiO_3 substrates

机译：在SrTiO_3衬底上生长的外延SrRuO_3薄膜的传输特性与厚度的关系

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To study the effect of the film/substrate interface in thin films we have analyzed the thickness dependence of the transport properties of SrRuO_3 films grown on SrTiO_3 substrates. Our data makes evident the failure of the so-called dead layer model to describe the observed thickness dependence of the conductivity. This is interpreted as due to a non-monotonous change of microstructure as thickness increases. Indeed, Atomic Force Microscopy studies indicate substantial modifications of the growth mechanism with thickness.

机译：为了研究薄膜/基底界面在薄膜中的作用，我们分析了在SrTiO_3基底上生长的SrRuO_3薄膜的传输特性的厚度依赖性。我们的数据表明，所谓的死层模型无法描述所观察到的电导率的厚度依赖性。这被解释为是由于厚度增加而引起的微观结构的非单调变化。实际上，原子力显微镜研究表明随着厚度的增加，生长机理有了实质性的改变。

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《Spintronics》|2002年|p.43-48|共6页
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G. Herranz; F. Sanchez; M.V. Garcia-Cuenca; C. Ferrater; M. Varela; B. Martinez; J. Fontcuberta;
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中图分类无线电电子学、电信技术;
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Thickness dependence of transport properties of epitaxial SrRuO_3 thin films grown on SrTiO_3 substrates

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