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首页> 外文会议>Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on >Etched lattice effects in edge-emitters and VCSELs - PBG effects or not?
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Etched lattice effects in edge-emitters and VCSELs - PBG effects or not?

机译：边缘发射极和VCSEL中的蚀刻晶格效应-是否有PBG效应？

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Summary form only given. There has been a significant amount of study world-wide on etching PBG structures into both VCSELs and edge-emitting lasers. The results of experiments etching PBGs structures into the DBRs of GaAs-based proton-implanted and oxide confined VCSELs using focussed ion beam etching (FIBE) are presented. The results of etching a small section of a PBG lattice on either side of the ridge waveguide in an edge-emitting laser are also be presented. A side mode suppression ratio improvement of 40dB has been observed through this technique. This has been modelled using a finite difference time domain model to understand if this is indeed a PBG effect.
机译：仅提供摘要表格。全世界在将PBG结构蚀刻到VCSEL和边缘发射激光器中进行了大量研究。给出了使用聚焦离子束刻蚀（FIBE）将PBGs结构刻蚀到GaAs基质子注入和氧化物约束VCSEL的DBR中的实验结果。还介绍了在边缘发射激光器中刻蚀脊形波导两侧的PBG晶格的一小部分的结果。通过这种技术已经观察到旁模抑制比提高了40dB。已使用时域有限差分模型对此进行了建模，以了解这是否确实是PBG效应。

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